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CAT28C16AN-90
Catalyst Semiconductor
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$0.6683 | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 90 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 35 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NO | 5 ms | R-PQCC-J32 | Not Qualified | e0 | 3 | 70 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, LDCC32,.5X.6 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||||
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CAT28C16AN-20
Catalyst Semiconductor
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$0.8203 | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | EEPROM | AUTOMATIC WRITE | NO | YES | 10000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 35 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NO | 10 ms | R-PQCC-J32 | Not Qualified | e0 | 3 | 70 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, LDCC32,.5X.6 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||||
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XLE28C16AC-200
Exel Microelectronics Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | EEPROM | NO | YES | 10000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | 5 ms | R-GDIP-T24 | Not Qualified | e0 | 85 °C | -40 °C | 24 | CERAMIC, GLASS-SEALED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | EXEL MICROELECTRONICS INC | unknown | |||||||||||||||||
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28C16AFT-25I/L
Microchip Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 250 ns | EEPROM | AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS | NO | YES | 10 | 10000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | 200 µs | R-PQCC-J32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 3.56 mm | 13.97 mm | 11.43 mm | MICROCHIP TECHNOLOGY INC | QFJ | PLASTIC, LCC-32 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||
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CAT28C16APA-90
Catalyst Semiconductor
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 90 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 35 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | 5 ms | R-PDIP-T24 | Not Qualified | e0 | 105 °C | -40 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 31.875 mm | 15.24 mm | CATALYST SEMICONDUCTOR INC | DIP | PLASTIC, DIP-24 | 24 | unknown | EAR99 | 8542.32.00.51 | |||||||||
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28C16A-20I/VS
Microchip Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | EEPROM | AUTOMATIC WRITE | NO | YES | 10000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | 1 ms | R-PDSO-G28 | Not Qualified | e0 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | TSOP1 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 X 13.40 MM, PLASTIC, VSOP-28 | 28 | unknown | EAR99 | 8542.32.00.51 | |||||||
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CAT28C16AX-12T
onsemi
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Check for Price | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 120 ns | EEPROM | NO | YES | 100 | 100000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 35 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | 5 ms | R-PDSO-G24 | Not Qualified | 70 °C | 260 | NOT SPECIFIED | 24 | PLASTIC/EPOXY | SOP | SOP24,.4 | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 2.65 mm | 15.4 mm | 7.5 mm | ON SEMICONDUCTOR | SOIC | SOIC-24 | 24 | compliant | EAR99 | 8542.32.00.51 | ||||||||||
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28C16AF-15I/TS
Microchip Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 150 ns | EEPROM | AUTOMATIC WRITE | NO | YES | 10000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | 200 µs | R-PDSO-G28 | Not Qualified | e0 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | TSOP1 | TSSOP28/32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | MICROCHIP TECHNOLOGY INC | TSOP | 8 X 20 MM, PLASTIC, TSOP-28 | 28 | unknown | EAR99 | 8542.32.00.51 | |||||||
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CAT28C16ALA-20
Catalyst Semiconductor
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Check for Price | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | EEPROM | NO | YES | 10000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 35 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | 10 ms | R-PDIP-T24 | Not Qualified | e3 | 105 °C | -40 °C | 260 | 24 | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 31.875 mm | 15.24 mm | CATALYST SEMICONDUCTOR INC | DIP | LEAD AND HALOGEN FREE, PLASTIC, DIP-24 | 24 | unknown | EAR99 | 8542.32.00.51 | ||||||||
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CAT28C16AXA-90
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 90 ns | EEPROM | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | R-PDSO-G24 | COMMERCIAL | e3 | 1 | 105 °C | -40 °C | 260 | 40 | 24 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 2.65 mm | 15.4 mm | 7.5 mm | ROCHESTER ELECTRONICS LLC | SOIC | LEAD AND HALOGEN FREE, EIAJ, SOIC-24 | 24 | unknown |