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CAT24C32PA-2.5
Catalyst Semiconductor
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Check for Price | No | Obsolete | 32.768 kbit | 8 | 4KX8 | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 4000 | 4.096 k | SERIAL | I2C | 900 nA | 3 µA | CMOS | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e0 | 105 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||||||
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CAT24C32PA-2.7
Catalyst Semiconductor
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Check for Price | No | Obsolete | 32.768 kbit | 8 | 4KX8 | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 4000 | 4.096 k | SERIAL | I2C | 900 nA | 3 µA | CMOS | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e0 | 105 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||||||
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CAT24C32P-1.8
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 100 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 4000 | 4.096 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 6 V | 1.8 V | CMOS | COMMERCIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 70 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | DIP | 8 | |||
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24C32/P
Microchip Technology Inc
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Check for Price | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 400 kHz | EEPROM | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 200 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 4000 | 4.096 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 5 µA | 3 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | 5 ms | R-PDIP-T8 | Not Qualified | e0 | 70 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | 4.32 mm | 9.46 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | DIP-8 | unknown | EAR99 | 8542.32.00.51 | DIP | 8 | ||||
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CAT24C32PI-1.8
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 100 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 4000 | 4.096 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 6 V | 1.8 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | DIP | 8 | ||
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CAT24C32P-2.5
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 100 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 4000 | 4.096 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 70 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | DIP | 8 | |||
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CAT24C32P-2.7
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 100 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 4000 | 4.096 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 6 V | 2.7 V | CMOS | COMMERCIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 70 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | DIP | 8 | |||
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CAT24C32PI
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 400 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 4000 | 4.096 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | DIP | 8 | ||
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CAT24C32PI-2.5
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 100 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 4000 | 4.096 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 6 V | 2.5 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | DIP | 8 | ||
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CAT24C32PI-2.7
Catalyst Semiconductor
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 100 kHz | EEPROM | I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 4000 | 4.096 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | I2C | 900 nA | 3 µA | 6 V | 2.7 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 9.36 mm | 7.62 mm | CATALYST SEMICONDUCTOR INC | DIP, DIP8,.3 | unknown | EAR99 | 8542.32.00.51 | DIP | 8 |