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1 - 10 of 16 results
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1N8182USE3
Microchip Technology Inc
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$25.9129 | Yes | Active | 294 V | 1 W | SILICON | 190 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 170 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LELF-R2 | e3 | IEC-61000-4-2, 4-4 | 175 °C | -55 °C | 260 | 10 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Matte Tin (Sn) | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | |||||||
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1N8182US
Microchip Technology Inc
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$25.9629 | No | Active | 294 V | 1 W | SILICON | 190 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 170 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LELF-R2 | IEC-61000-4-2, 4-4 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | |||||||||||
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MQ1N8182US
Microchip Technology Inc
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$31.8619 | No | Active | 294 V | 1 W | SILICON | 190 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 170 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LELF-R2 | IEC-61000-4-2, 4-4; MIL-19500 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | |||||||||||
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MX1N8182US
Microchip Technology Inc
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$34.6972 | No | Active | 294 V | 1 W | SILICON | 190 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 170 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LELF-R2 | IEC-61000-4-2, 4-4; MIL-19500 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | |||||||||||
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MV1N8182US
Microchip Technology Inc
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$37.3175 | No | Active | 294 V | 1 W | SILICON | 190 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 170 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LELF-R2 | IEC-61000-4-2, 4-4; MIL-19500 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | |||||||||||
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MS1N8182US
Microchip Technology Inc
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$172.3696 | No | Active | 294 V | 1 W | SILICON | 190 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 170 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LELF-R2 | IEC-61000-4-2, 4-4; MIL-19500 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | |||||||||||
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MQ1N8182US
Microsemi Corporation
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Check for Price | No | Transferred | 294 V | 4 pF | 500 nA | 1 W | SILICON | 190 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 170 V | 1 | AVALANCHE | 150 W | 170 V | O-LELF-R2 | 175 °C | -55 °C | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | MELF-2 | compliant | EAR99 | 8541.10.00.50 | |||||||||
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MX1N8182US
Microsemi Corporation
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Check for Price | No | Transferred | 294 V | 4 pF | 500 nA | 1 W | SILICON | 190 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 170 V | 1 | AVALANCHE | 150 W | 170 V | O-LELF-R2 | 175 °C | -55 °C | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | MELF-2 | compliant | EAR99 | 8541.10.00.50 | |||||||||
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MV1N8182USE3
Microsemi Corporation
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Check for Price | Yes | Transferred | 294 V | 4 pF | 500 nA | 1 W | SILICON | 190 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 170 V | 1 | AVALANCHE | 150 W | 170 V | O-LELF-R2 | 175 °C | -55 °C | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.50 | ||||||||||
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MS1N8182USE3
Microsemi Corporation
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Check for Price | Yes | Transferred | 294 V | 4 pF | 500 nA | 1 W | SILICON | 190 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 170 V | 1 | AVALANCHE | 150 W | 170 V | O-LELF-R2 | 175 °C | -55 °C | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.50 |