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1N8157
Microsemi Corporation
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$21.7827 | No | Transferred | 25.1 V | 1 µA | 1 W | SILICON | 17.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 15 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LALF-W2 | IEC-61000-4-2,4-4,4-5 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.50 | |||||||
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1N8157US
Microsemi Corporation
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$21.9320 | No | Transferred | 25.1 V | 4 pF | 1 µA | 1 W | SILICON | 17.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 15 V | 1 | AVALANCHE | 150 W | 15 V | O-LELF-R2 | 175 °C | -55 °C | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.50 | MELF-2 | |||||||
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1N8157
Microchip Technology Inc
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$25.5350 | No | Active | 25.1 V | 1 µA | 1 W | SILICON | 17.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 15 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LALF-W2 | IEC-61000-4-2,4-4,4-5 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||
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1N8157US
Microchip Technology Inc
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$25.7136 | No | Active | 25.1 V | 1 W | SILICON | 17.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 15 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LELF-R2 | IEC-61000-4-2, 4-4 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | MELF-2 | |||||||||
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1N8157E3
Microchip Technology Inc
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$25.7236 | Yes | Active | 25.1 V | 1 µA | 1 W | SILICON | 17.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 15 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LALF-W2 | IEC-61000-4-2,4-4,4-5 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||
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1N8157USE3
Microchip Technology Inc
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$25.9129 | Yes | Active | 25.1 V | 1 W | SILICON | 17.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 15 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LELF-R2 | IEC-61000-4-2, 4-4 | 175 °C | -55 °C | 260 | 10 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | MELF-2 | |||||||
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MQ1N8157
Microsemi Corporation
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$29.3975 | No | Transferred | 25.1 V | 1 µA | 1 W | SILICON | 17.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 15 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LALF-W2 | IEC-61000-4-2,4-4,4-5 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.50 | |||||||
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MQ1N8157US
Microsemi Corporation
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$29.6132 | No | Transferred | 25.1 V | 4 pF | 1 µA | 1 W | SILICON | 17.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 15 V | 1 | AVALANCHE | 150 W | 15 V | O-LELF-R2 | 175 °C | -55 °C | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.50 | MELF-2 | |||||||
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MQ1N8157
Microchip Technology Inc
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$31.3249 | No | Active | 25.1 V | 1 µA | 1 W | SILICON | 17.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 15 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LALF-W2 | IEC-61000-4-2,4-4,4-5 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||
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MQ1N8157US
Microchip Technology Inc
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$31.5526 | No | Active | 25.1 V | 1 W | SILICON | 17.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 15 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LELF-R2 | IEC-61000-4-2, 4-4; MIL-19500 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | MELF-2 |