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JANTXV1N6475
Semtech Corporation
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$1.0000 | Transferred | 63.5 V | 44 V | SILICON | 43.7 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 40 V | 1 | AVALANCHE | HIGH RELIABILITY | 1.5 kW | Qualified | O-LALF-W2 | MIL-19500/552 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | SEMTECH CORP | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.50 | SEMTECH | ||||||||
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JAN1N6475US
Semtech Corporation
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$1.0000 | Transferred | 63.5 V | 3 W | 43.7 V | SILICON | 43.7 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 40.3 V | 1 | AVALANCHE | 1.5 kW | Qualified | O-LELF-N2 | MIL-19500/552C | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | NO LEAD | END | SEMTECH CORP | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.50 | |||||||||
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JAN1N6475
Semtech Corporation
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$1.0000 | Transferred | 63.5 V | 5 µA | 5 W | 44 V | SILICON | 43.7 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 40 V | 1 | AVALANCHE | TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE | 1.5 kW | Qualified | O-LALF-W2 | MIL-19500/552 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | SEMTECH CORP | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.50 | |||||||
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1N6475
Microchip Technology Inc
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$12.4422 | No | Active | 3 W | SILICON | 43.7 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 40.3 V | 1 | AVALANCHE | HIGH RELIABILITY, METALLURGICALLY BONDED | 1.5 kW | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, G, 2 PIN | compliant | |||||||||||||
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JAN1N6475
Microchip Technology Inc
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$12.6601 | No | Active | 3 W | SILICON | 43.7 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 40.3 V | 1 | AVALANCHE | 1.5 kW | Qualified | O-XALF-W2 | e0 | MIL-19500/552C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||
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JANTX1N6475
Microchip Technology Inc
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$14.7622 | No | Active | 3 W | SILICON | 43.7 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 40.3 V | 1 | AVALANCHE | 1.5 kW | Qualified | O-XALF-W2 | e0 | MIL-19500/552C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||
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1N6475US
Microchip Technology Inc
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$15.0975 | No | Active | 63.5 V | 3 W | 43.7 V | SILICON | 43 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 40.3 V | 1 | AVALANCHE | 1.5 kW | Not Qualified | R-LELF-R2 | e0 | ISOLATED | 2 | GLASS | RECTANGULAR | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETICALLY SEALED, GLASS, D-5C, MELF-2 | compliant | ||||||||||||
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JANTXV1N6475/TR
Microchip Technology Inc
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$15.2675 | Active | 3 W | SILICON | 43.7 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 40.3 V | 1 | AVALANCHE | 1.5 kW | Qualified | O-XALF-W2 | e0 | MIL-19500/552C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||||
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JANTX1N6475US
Semtech Corporation
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$15.6650 | Transferred | 63.5 V | 3 W | 43.7 V | SILICON | 43.7 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 40.3 V | 1 | AVALANCHE | 1.5 kW | Qualified | O-LELF-N2 | MIL-19500/552C | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | NO LEAD | END | SEMTECH CORP | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.50 | |||||||||
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1N6475
Microsemi Corporation
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$15.8865 | No | No | Transferred | 3 W | SILICON | 43.7 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 40.3 V | 1 | AVALANCHE | HIGH RELIABILITY, METALLURGICALLY BONDED | 1.5 kW | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS, G, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.50 |