Parametric results for: 1n6467 under Transient Suppressors

All Filters Additional Feature Breakdown Voltage-Min Breakdown Voltage-Nom Case Connection Clamping Voltage-Max Configuration Diode Element Material Diode Type JESD-30 Code JESD-609 Code Manufacturer Number of Elements Polarity Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Surface Mount Technology

HIGH RELIABILITY 14 HIGH RELIABILITY, METALLURGICALLY BODED 4 HIGH SURGE CAPABILITY 5 METALLURGICALLY BODED 6 TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE 2

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Breakdown Voltage-Min (2)

40 V 2 43.7 V 36

Min (V) - Max (V)

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Breakdown Voltage-Nom (2)

43.7 V 2 44 V 19

Min (V) - Max (V)

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ISOLATED 71

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Clamping Voltage-Max (1)

63.5 V 35

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Configuration (1)

SINGLE 73

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Diode Element Material (1)

SILICON 74

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Diode Type (1)

TRANS VOLTAGE SUPPRESSOR DIODE 82

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O-LALF-W2 20 O-LELF-N2 2 O-LELF-R2 10 O-MELF-R2 6 O-XALF-W2 15 O-XELF-R2 20

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e0 45 e2 2

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Manufacturer (10)

Bkc Semiconductors Inc 9 Defense Logistics Agency 6 Digitron Semiconductors 3 Microchip Technology Inc 11 Microsemi Corporation 16 Micross Components 12 Semicon Components Inc 4 Semtech Corporation 18 Sensitron Semiconductors 3 Voltage Multipliers Inc 1

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Number of Elements (1)

1 73

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Polarity (2)

BIDIRECTIONAL 4 UNIDIRECTIONAL 72

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Power Dissipation-Max (3)

2.5 W 48 3 W 13 5 W 6

Min (W) - Max (W)

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Rep Pk Reverse Voltage-Max (3)

30.5 V 1 40 V 9 40.3 V 62

Min (V) - Max (V)

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Reverse Current-Max (1)

2 µA 1

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Surface Mount (2)

NO 37 YES 39

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Technology (1)

AVALANCHE 74

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