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1N6345
Microchip Technology Inc
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$8.5250 | No | Active | 1.7 mA | 50 nA | 500 mW | 75 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 180 Ω | 1.6 kΩ | 73.5 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||
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JAN1N6345
Microchip Technology Inc
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$10.1998 | No | Active | 1.7 mA | 500 mW | 75 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | LOW NOISE, HIGH SURGE CAPABILITY | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-41 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
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JANTX1N6345
Microchip Technology Inc
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$12.8114 | No | Active | 1.7 mA | 500 mW | 75 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | HGH RELIABILITY | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
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1N6345US
Microsemi Corporation
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$13.8338 | No | No | Transferred | 1.7 mA | 500 mW | 75 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED, HIGH RELIABILITY | 180 Ω | 5 % | Not Qualified | O-LELF-R2 | e0 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, B, D-5D, 2 PIN | unknown | EAR99 | 8541.10.00.50 | |||||||||
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1N6345US
Microchip Technology Inc
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$15.0825 | No | Active | 1.7 mA | 500 mW | 75 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED, HIGH RELIABILITY | 180 Ω | 5 % | Not Qualified | O-LELF-R2 | e0 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, B, D-5D, 2 PIN | compliant | ||||||||||||
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JANTXV1N6345
Microchip Technology Inc
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$15.1162 | No | Active | 1.7 mA | 500 mW | 75 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | LOW NOISE, HIGH SURGE CAPABILITY | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
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JANTX1N6345
Microsemi Corporation
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$15.5814 | No | Transferred | 1.7 mA | 500 mW | 75 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | HGH RELIABILITY | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | |||||||||||
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JAN1N6345US
Microchip Technology Inc
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$16.4187 | No | Active | 1.7 mA | 50 nA | 500 mW | 75 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 180 Ω | 1.6 kΩ | 56 V | 5 % | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | |||||||||
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JAN1N6345US/TR
Microchip Technology Inc
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$16.5680 | Active | 1.7 mA | 50 nA | 500 mW | 75 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 180 Ω | 1.6 kΩ | 56 V | 5 % | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.50 | |||||||||
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JANTXV1N6345
Microsemi Corporation
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$18.3770 | No | No | Transferred | 1.7 mA | 500 mW | 75 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | LOW NOISE, HIGH SURGE CAPABILITY | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | EAR99 | 8541.10.00.50 |