Parametric results for: 1n5817.. under Rectifier Diodes
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1N5817+
SPC Multicomp
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$0.0069 | Active | 1 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 20 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 1 | O-PALF-W2 | DO-41 | 125 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | SPC TECHNOLOGY/ MULTICOMP | O-PALF-W2 | unknown | EAR99 | 8541.10.00.80 | Multicomp Pro | ||||||||||||||||||
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1N5817
Diotec Semiconductor AG
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$0.0441 | Yes | Active | 1 A | 750 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 20 V | 1 | SCHOTTKY | 25 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AC | 150 °C | -50 °C | 260 | 10 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | DIOTEC SEMICONDUCTOR AG | ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN | not_compliant | EAR99 | 8541.10.00.80 | Diotec | DO-15 | 2 | ||||||||||
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1N5817
DC Components Co Ltd
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$0.0477 | Contact Manufacturer | 1 A | 750 mV | 1 mA | SILICON | 20 V | RECTIFIER DIODE | SINGLE | NO | 20 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 30 A | 1 | 20 V | O-PALF-W2 | DO-41 | 150 °C | -55 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | DC COMPONENTS CO LTD | unknown | |||||||||||||||||
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1N5817
STMicroelectronics
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$0.0782 | Yes | Active | 1 A | 750 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 20 V | 1 | SCHOTTKY | FREE WHEELING DIODE | 25 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-41 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) - annealed | WIRE | AXIAL | STMICROELECTRONICS | PLASTIC PACKAGE-2 | not_compliant | EAR99 | 8541.10.00.80 | STMicroelectronics | DO-41 | 2 | ||||||||||
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1N5817-E3/73
Vishay Intertechnologies
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$0.0806 | Yes | Active | 1 A | 450 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 20 V | 1 | SCHOTTKY | FREE WHEELING DIODE | GENERAL PURPOSE | 25 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AL | 125 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | DO-41, 2 PIN | not_compliant | Vishay | ||||||||||||||
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1N5817-T
Diodes Incorporated
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$0.1136 | No | Yes | Active | 1 A | 750 mV | 1 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 20 V | 1 | SCHOTTKY | LOW POWER LOSS, FREE WHEELING DIODE | EFFICIENCY | 25 A | 1 | 20 V | Not Qualified | O-PALF-W2 | e3 | DO-41 | 1 | 125 °C | -65 °C | 260 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Bright Tin (Sn) | WIRE | AXIAL | DIODES INC | not_compliant | EAR99 | 8541.10.00.80 | Diodes Incorporated | DO-41 | 2 | ||||||
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1N5817-E3/54
Vishay Intertechnologies
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$0.1442 | Yes | Active | 1 A | 450 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 20 V | 1 | SCHOTTKY | FREE WHEELING DIODE | GENERAL PURPOSE | 25 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AL | 125 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | DO-41, 2 PIN | not_compliant | Vishay | ||||||||||||||
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1N5817G
onsemi
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$0.1758 | Yes | Active | 1 A | 320 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 20 V | 1 | SCHOTTKY | FREE WHEELING DIODE, LOW POWER LOSS | GENERAL PURPOSE | 25 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-41 | 125 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) - annealed | WIRE | AXIAL | ONSEMI | CASE 59-10, 2 PIN | not_compliant | EAR99 | 8541.10.00.80 | onsemi | Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia | 2 | 59-10 | |||||||||
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1N5817
Taiwan Semiconductor
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$0.1808 | Yes | Active | 1 A | 450 mV | 1 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 20 V | 1 | SCHOTTKY | GENERAL PURPOSE | 30 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AL | 1 | 125 °C | -55 °C | 260 | 10 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) | WIRE | AXIAL | TAIWAN SEMICONDUCTOR CO LTD | DO-41, 2 PIN | not_compliant | EAR99 | 8541.10.00.80 | Taiwan Semiconductor | |||||||||
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1N5817-B
Diodes Incorporated
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$0.1843 | No | Yes | Obsolete | 1 A | 750 mV | 1 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 20 V | 1 | SCHOTTKY | LOW POWER LOSS, FREE WHEELING DIODE | EFFICIENCY | 25 A | 1 | 20 V | Not Qualified | O-PALF-W2 | e3 | DO-41 | 1 | 125 °C | -65 °C | 260 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Bright Tin (Sn) | WIRE | AXIAL | DIODES INC | not_compliant | EAR99 | 8541.10.00.80 | Diodes Incorporated | DO-41 | 2 |