Findchips: Parametric Search Results for 1n5806%2bjantxv

Parametric results for: 1n5806%2bjantxv under Rectifier Diodes

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		1N5806 Microsemi Corporation
		1N5806 Sensitron Semiconductors
		JAN1N5806 Microchip Technology Inc
		1N5806 Microchip Technology Inc
		JANTX1N5806 Microchip Technology Inc
		JANTX1N5806/TR Microchip Technology Inc
		1N5806US Sensitron Semiconductors
		1N5806/TR Microchip Technology Inc
		1N5806E3 Microchip Technology Inc
		1N5806US Microchip Technology Inc

				Most Relevant													Technical					Compliance				Operating Conditions					Physical								Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Output Current-Max	Forward Voltage-Max (VF)	Reverse Recovery Time-Max	Reverse Current-Max	Power Dissipation-Max	Diode Element Material	Breakdown Voltage-Min	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Technology	Additional Feature	Application	Non-rep Pk Forward Current-Max	Number of Phases	Reverse Test Voltage	Qualification Status	JESD-30 Code	JESD-609 Code	Reference Standard	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code	Samacsys Manufacturer	Date Of Intro	Part Package Code

$4.3837

Transferred

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

GENERAL PURPOSE

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROSEMI CORP

HERMETIC SEALED, GLASS PACKAGE-2

not_compliant

EAR99

8541.10.00.80

Microsemi Corporation

$4.4504

Active

2.5 A

875 mV

25 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

METALLURGICALLY BONDED

ULTRA FAST RECOVERY

35 A

Not Qualified

E-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

TIN LEAD

WIRE

AXIAL

SENSITRON SEMICONDUCTOR

HERMETIC SEALED, GLASS, 106, 2 PIN

compliant

EAR99

8541.10.00.80

1997-01-01

$4.9560

Active

1 A

25 ns

3 W

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

GENERAL PURPOSE

Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

$5.3683

Active

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

GENERAL PURPOSE

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

Microchip

$5.4245

Active

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

GENERAL PURPOSE

Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

Microchip

$5.5814

Active

2.5 A

975 mV

25 ns

1 µA

SILICON

160 V

RECTIFIER DIODE

SINGLE

150 V

HIGH RELIABILITY

ULTRA FAST RECOVERY

35 A

150 V

O-LALF-W2

MIL-PRF-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb)

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

$5.6215

Active

2.5 A

875 mV

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

METALLURGICALLY BONDED

ULTRA FAST RECOVERY

35 A

Not Qualified

E-LELF-R2

175 °C

-65 °C

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

TIN LEAD

WRAP AROUND

END

SENSITRON SEMICONDUCTOR

MELF-A, 2 PIN

compliant

EAR99

8541.10.00.80

1997-01-01

MELF

$5.9588

Active

2.5 A

975 mV

25 ns

1 µA

SILICON

160 V

RECTIFIER DIODE

SINGLE

150 V

HIGH RELIABILITY

ULTRA FAST RECOVERY

35 A

150 V

O-LALF-W2

175 °C

-65 °C

NOT SPECIFIED

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

unknown

EAR99

8541.10.00.80

$6.0230

Yes

Active

1 A

875 mV

25 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

GENERAL PURPOSE

35 A

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

MATTE TIN OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

Microchip

$6.2583

Active

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

AVALANCHE

HIGH RELIABILITY

O-LELF-R2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

HERMETIC SEALED, GLASS, MELF-2

compliant

Microchip

1 2 3 4 5 Next

Compare

1N5806

Microsemi Corporation

$4.3837

Transferred

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

GENERAL PURPOSE

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROSEMI CORP

HERMETIC SEALED, GLASS PACKAGE-2

not_compliant

EAR99

8541.10.00.80

Microsemi Corporation

1N5806

Sensitron Semiconductors

$4.4504

Active

2.5 A

875 mV

25 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

METALLURGICALLY BONDED

ULTRA FAST RECOVERY

35 A

Not Qualified

E-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

TIN LEAD

WIRE

AXIAL

SENSITRON SEMICONDUCTOR

HERMETIC SEALED, GLASS, 106, 2 PIN

compliant

EAR99

8541.10.00.80

1997-01-01

JAN1N5806

Microchip Technology Inc

$4.9560

Active

1 A

25 ns

3 W

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

GENERAL PURPOSE

Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

1N5806

Microchip Technology Inc

$5.3683

Active

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

GENERAL PURPOSE

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

Microchip

JANTX1N5806

Microchip Technology Inc

$5.4245

Active

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

GENERAL PURPOSE

Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

Microchip

JANTX1N5806/TR

Microchip Technology Inc

$5.5814

Active

2.5 A

975 mV

25 ns

1 µA

SILICON

160 V

RECTIFIER DIODE

SINGLE

150 V

HIGH RELIABILITY

ULTRA FAST RECOVERY

35 A

150 V

O-LALF-W2

MIL-PRF-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb)

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

1N5806US

Sensitron Semiconductors

$5.6215

Active

2.5 A

875 mV

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

METALLURGICALLY BONDED

ULTRA FAST RECOVERY

35 A

Not Qualified

E-LELF-R2

175 °C

-65 °C

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

TIN LEAD

WRAP AROUND

END

SENSITRON SEMICONDUCTOR

MELF-A, 2 PIN

compliant

EAR99

8541.10.00.80

1997-01-01

MELF

1N5806/TR

Microchip Technology Inc

$5.9588

Active

2.5 A

975 mV

25 ns

1 µA

SILICON

160 V

RECTIFIER DIODE

SINGLE

150 V

HIGH RELIABILITY

ULTRA FAST RECOVERY

35 A

150 V

O-LALF-W2

175 °C

-65 °C

NOT SPECIFIED

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

unknown

EAR99

8541.10.00.80

1N5806E3

Microchip Technology Inc

$6.0230

Yes

Active

1 A

875 mV

25 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

GENERAL PURPOSE

35 A

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

MATTE TIN OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

Microchip

1N5806US

Microchip Technology Inc

$6.2583

Active

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

AVALANCHE

HIGH RELIABILITY

O-LELF-R2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

HERMETIC SEALED, GLASS, MELF-2

compliant

Microchip

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