Parametric results for: 1n5617 under Signal Diodes
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1N5617GP-E3/54
Vishay Semiconductors
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$0.1912 | Yes | Yes | Not Recommended | 1 A | 1.2 V | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | FREE WHEELING DIODE, HIGH RELIABILITY | 50 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-204AC | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-15 | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | Vishay | ||||||||||
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1N5617
Microsemi Corporation
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$3.8727 | No | No | Transferred | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY, METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS, A, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.80 | Microsemi Corporation | |||||||||||||
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1N5617C.TR
Semtech Corporation
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$4.1059 | Transferred | 1 A | 1.6 V | 150 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 25 A | 1 | 400 V | E-XALF-W2 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ELLIPTICAL | LONG FORM | WIRE | AXIAL | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 | ||||||||||||||||
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1N5617
Microchip Technology Inc
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$4.5977 | No | Active | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY, METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A, 2 PIN | compliant | ||||||||||||||||||
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1N5617E3/TR
Microchip Technology Inc
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$4.9946 | Active | RECTIFIER DIODE | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||
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1N5617US
Sensitron Semiconductors
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$6.6523 | No | No | Active | 1 A | 1.6 V | 150 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | HIGH RELIABILITY | FAST RECOVERY | 25 A | 1 | 400 V | Not Qualified | E-LELF-R2 | e0 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN LEAD | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | MELF-1, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | 1994-01-01 | ||||||||
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1N5617US
Microchip Technology Inc
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$6.6680 | No | Active | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5A, 2 PIN | compliant | |||||||||||||||||||
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1N5617US
Microsemi Corporation
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$6.7362 | No | No | Transferred | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, D-5A, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.80 | Microsemi Corporation | ||||||||||||||
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1N5617US/TR
Microchip Technology Inc
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$6.8507 | Active | 1 A | 1.6 V | 150 ns | 500 nA | SILICON | 440 V | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | FAST RECOVERY | 25 A | 1 | 400 V | O-LELF-R2 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||||||||||
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JANTX1N5617
Semtech Corporation
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$12.1611 | Transferred | 1 A | 1.2 V | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | 50 A | 1 | Qualified | E-XALF-W2 | MIL-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ELLIPTICAL | LONG FORM | WIRE | AXIAL | SEMTECH CORP | DO-7 | HERMETIC SEALED PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.80 | SEMTECH |