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1N5551
Microchip Technology Inc
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$6.2319 | No | Active | 5 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | GLASS, E PACKAGE, 2 PIN | compliant | Microchip | |||||||||||||||||
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JAN1N5551
Microchip Technology Inc
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$6.2790 | No | Active | 3 A | 1.2 V | 2 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, B PACKAGE-2 | compliant | |||||||||||||
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1N5551/TR
Microchip Technology Inc
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$6.4332 | Active | 5 A | 1.2 V | 2 µs | 1 µA | SILICON | 440 V | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | 400 V | O-LALF-W2 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | ||||||||||||||
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JANTX1N5551
Microchip Technology Inc
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$6.6796 | No | Active | 5 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | POWER | 100 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/420G | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-41, 2 PIN | compliant | |||||||||||||||||||
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JANTX1N5551/TR
Microchip Technology Inc
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$6.7732 | No | Active | 3 A | 1.2 V | 2 µs | 1 µA | SILICON | 440 V | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | 400 V | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||
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1N5551US
Microchip Technology Inc
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$7.7294 | No | Active | 5 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | POWER | 100 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, D-5B, 2 PIN | compliant | Microchip | |||||||||||||||
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1N5551USE3
Microchip Technology Inc
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$7.8487 | Yes | Active | 3 A | 1.2 V | 2 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | POWER | 100 A | 1 | O-LELF-R2 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, HERMETIC SEALED, GLASS, D-5B, SQ-MELF, B PACKAGE-2 | compliant | |||||||||||||||||
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1N5551US/TR
Microchip Technology Inc
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$7.9128 | No | Active | 3 A | 1.2 V | 2 µs | 1 µA | SILICON | 440 V | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | 400 V | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | ||||||||||||||
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1N5551USE3/TR
Microchip Technology Inc
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$8.0479 | Active | 3 A | 1.2 V | 2 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | POWER | 100 A | 1 | O-LELF-R2 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||
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1N5551US
Sensitron Semiconductors
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$8.5870 | No | No | Active | 3 A | 1.2 V | 2 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | GENERAL PURPOSE | 150 A | 1 | Not Qualified | O-LELF-R2 | e0 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | compliant | EAR99 | 8541.10.00.80 | MELF | 2 |