Filter Your Search
1 - 10 of 54 results
Select Parts | Part Number |
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1N4896
Microchip Technology Inc
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1N4896/TR
Microchip Technology Inc
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1N4896A
Microchip Technology Inc
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1N4896A/TR
Microchip Technology Inc
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1N4896A
Compensated Devices Inc
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1N4896-1
Compensated Devices Inc
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1N4911A
New Jersey Semiconductor Products Inc
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1N4896AE3
Microsemi Corporation
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1N4898
New Jersey Semiconductor Products Inc
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1N4896E3
Microsemi Corporation
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Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||
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Composite Price
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Rohs Code
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Part Life Cycle Code
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Working Test Current
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Power Dissipation-Max
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Reference Voltage-Nom
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Diode Element Material
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Diode Type | Configuration |
Surface Mount
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Number of Elements | Technology |
Additional Feature
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Voltage Temp Coeff-Max
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Voltage Tol-Max
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Qualification Status
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JESD-30 Code
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JESD-609 Code
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JEDEC-95 Code
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Operating Temperature-Max
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Operating Temperature-Min
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Case Connection
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Number of Terminals
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Package Body Material
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Package Shape
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Package Style
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Terminal Finish
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Terminal Form
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Terminal Position
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Ihs Manufacturer
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Package Description
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Reach Compliance Code
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ECCN Code
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HTS Code
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No | Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACAKGE-2 | compliant | ||||
Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | ||||||
No | Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACAKGE-2 | compliant | ||||
Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | ||||||
Transferred | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED, LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | COMPENSATED DEVICES INC | unknown | ||||||
Transferred | 500 µA | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | COMPENSATED DEVICES INC | unknown | |||||
Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | 1 | ZENER | 5 % | 175 °C | -65 °C | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | |||||||||||||||||||||
Transferred | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | O-LALF-W2 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.50 | ||||||||
Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | 1 | ZENER | 5 % | 175 °C | -65 °C | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | |||||||||||||||||||||
Transferred | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | O-LALF-W2 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.50 |
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1N4896
Microchip Technology Inc
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$24.8880 Buy | No | Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACAKGE-2 | compliant | |||||
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1N4896/TR
Microchip Technology Inc
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$25.0873 Buy | Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | |||||||
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1N4896A
Microchip Technology Inc
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$25.6886 Buy | No | Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACAKGE-2 | compliant | |||||
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1N4896A/TR
Microchip Technology Inc
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$25.8836 Buy | Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | |||||||
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1N4896A
Compensated Devices Inc
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Check for Price Buy | Transferred | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED, LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | COMPENSATED DEVICES INC | unknown | |||||||
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1N4896-1
Compensated Devices Inc
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Check for Price Buy | Transferred | 500 µA | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | COMPENSATED DEVICES INC | unknown | ||||||
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1N4911A
New Jersey Semiconductor Products Inc
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Check for Price Buy | Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | 1 | ZENER | 5 % | 175 °C | -65 °C | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | ||||||||||||||||||||||
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1N4896AE3
Microsemi Corporation
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Check for Price Buy | Transferred | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | O-LALF-W2 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.50 | |||||||||
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1N4898
New Jersey Semiconductor Products Inc
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Check for Price Buy | Active | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | 1 | ZENER | 5 % | 175 °C | -65 °C | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | ||||||||||||||||||||||
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1N4896E3
Microsemi Corporation
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Check for Price Buy | Transferred | 500 mW | 12.8 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | LOW NOISE | 1.28 mV/°C | 5 % | O-LALF-W2 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.50 |