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Manufacturer Part Number: 1n4795b
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1N4795B
 Spectrum Control 		Check for Price Active 39 pF 0.005 pA 400 mW SILICON VARIABLE CAPACITANCE DIODE SINGLE NO 55 V 1 5 % 2.0243 15 20 V ABRUPT Not Qualified O-LALF-W2 DO-7 175 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL API TECHNOLOGIES CORP O-LALF-W2 compliant EAR99 8541.10.00.80
1N4795B
 New Jersey Semiconductor Products Inc 		Check for Price Contact Manufacturer SILICON 20 V VARIABLE CAPACITANCE DIODE SINGLE 1 2.35 15 ABRUPT 150 °C -65 °C ISOLATED NEW JERSEY SEMICONDUCTOR PRODUCTS INC unknown
1N4795B
 Eastron Corp 		Check for Price No Obsolete 39 pF 22 V VARIABLE CAPACITANCE DIODE SINGLE NO 55 V 1 2.34 15 ABRUPT e0 ISOLATED Tin/Lead (Sn/Pb) EASTRON CORP unknown EAR99
1N4795B
 International Semiconductor Inc 		Check for Price Obsolete 39 pF 400 mW SILICON 20 V VARIABLE CAPACITANCE DIODE SINGLE NO 55 V 1 HIGH Q, LOW LEAKAGE 5 % 2.35 15 ABRUPT Not Qualified O-LALF-W2 DO-7 ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL INTERNATIONAL SEMICONDUCTOR INC O-LALF-W2 unknown EAR99 8541.10.00.80
1N4795BCO
 Cobham PLC 		Check for Price No Transferred 39 pF 5 nA SILICON 22 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 5 % 2.0243 15 20 V Not Qualified X-XUUC-N e0 150 °C -65 °C UNSPECIFIED UNSPECIFIED UNCASED CHIP TIN LEAD NO LEAD UPPER KNOX SEMICONDUCTORS INC X-XUUC-N unknown EAR99 8541.10.00.40 DIE 1
1N4795B
 Cobham PLC 		Check for Price No Transferred 39 pF 5 nA 500 mW SILICON 22 V VARIABLE CAPACITANCE DIODE SINGLE NO 55 V 1 5 % 2.34 15 20 V ABRUPT Not Qualified O-LALF-W2 e0 DO-7 150 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL KNOX SEMICONDUCTORS INC O-LALF-W2 unknown EAR99 8541.10.00.80
1N4795B
 Cobham Semiconductor Solutions 		Check for Price No No Obsolete 39 pF 500 mW SILICON 22 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 5 % 2.34 15 ABRUPT Not Qualified O-LALF-W2 e0 DO-7 ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL AEROFLEX/MICROMETRICS O-LALF-W2 unknown EAR99 8541.10.00.80
1N4795B
 Msi Electronics Inc 		Check for Price Obsolete 39 pF 0.005 pA 400 mW SILICON VARIABLE CAPACITANCE DIODE SINGLE NO 55 V 1 5 % 2.0243 15 20 V ABRUPT Not Qualified O-LALF-W2 175 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL MSI ELECTRONICS INC O-LALF-W2 unknown EAR99 8541.10.00.80
1N4795B
 Codi Semiconductor Inc 		Check for Price No Obsolete 39 pF VARIABLE CAPACITANCE DIODE SINGLE NO 55 V 1 2.34 15 ABRUPT e0 ISOLATED Tin/Lead (Sn/Pb) CODI SEMICONDUCTOR INC unknown EAR99
1N4795BCO
 Cobham Semiconductor Solutions 		Check for Price Obsolete 39 pF SILICON 22 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 5 % 2.0243 15 ABRUPT Not Qualified X-XUUC-N e0 NOT SPECIFIED NOT SPECIFIED ISOLATED UNSPECIFIED UNSPECIFIED UNCASED CHIP TIN LEAD NO LEAD UPPER AEROFLEX/MICROMETRICS X-XUUC-N unknown EAR99 8541.10.00.40 DIE 1