Parametric results for: 1N935 under Zener Diodes
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1N935B
Microsemi Corporation
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$3.2051 | No | No | Transferred | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.9 mV/°C | 5 % | O-LALF-W2 | e0 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-7 | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | not_compliant | EAR99 | 8541.10.00.50 | ||||||||
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1N935BUR-1
Microchip Technology Inc
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$4.1971 | No | Active | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 0.9 mV/°C | 5 % | Not Qualified | O-LELF-R2 | e0 | DO-213AA | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2 | compliant | ||||||||||||
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1N935BUR-1/TR
Microchip Technology Inc
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$4.3771 | Active | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 0.9 mV/°C | 5 % | Not Qualified | O-LELF-R2 | e0 | DO-213AA | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.50 | ||||||||||||
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1N935BUR-1
Microsemi Corporation
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$4.6278 | No | No | Transferred | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 0.9 mV/°C | 5 % | Not Qualified | O-LELF-R2 | e0 | DO-213AA | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | DO-213AA | HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2 | 2 | not_compliant | EAR99 | 8541.10.00.50 | |||||||
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1N935A
Microsemi Corporation
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$4.6924 | No | No | Transferred | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.9 mV/°C | 5 % | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROSEMI CORP | DO-7 | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.50 | ||||||
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1N935B
Microchip Technology Inc
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$4.8728 | No | Active | 7.5 mA | 500 mW | 9 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.9 mV/°C | 5 % | O-LALF-W2 | e0 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | |||||||||||
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1N935B/TR
Microchip Technology Inc
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$5.0078 | No | Active | 7.5 mA | 500 mW | 9 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICAL BONDED | 20 Ω | 0.9 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-204AA | 150 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | compliant | EAR99 | 8541.10.00.50 | ||||||
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1N935BE3
Microchip Technology Inc
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$5.0264 | Yes | Active | 7.5 mA | 500 mW | 9 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICAL BONDED | 20 Ω | 0.9 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e3 | DO-204AA | 150 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | compliant | ||||||||
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1N935BE3/TR
Microchip Technology Inc
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$5.2128 | Yes | Active | 7.5 mA | 500 mW | 9 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICAL BONDED | 0.9 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e3 | DO-204AA | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | compliant | ||||||||
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1N935A-1
Microchip Technology Inc
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$5.7228 | No | Active | 7.5 mA | 500 mW | 9 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICAL BONDED | 20 Ω | 0.9 mV/°C | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-204AA | 100 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | compliant |