Parametric results for: 1N6641%2BJANTXV under Rectifier Diodes
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JAN1N6641
Microchip Technology Inc
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$6.9888 | No | Active | 300 mA | 5 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/609D | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-35, 2 PIN | compliant | |||||||||||||
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1N6641
Microsemi Corporation
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$7.7700 | No | No | Transferred | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | 2.5 A | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED PACKAGE-2 | unknown | EAR99 | 8541.10.00.70 | ||||||
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1N6641
Microchip Technology Inc
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$7.7744 | No | Active | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | 2.5 A | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED PACKAGE-2 | compliant | |||||||||
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JAN1N6641
Microsemi Corporation
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$8.8523 | No | No | Transferred | 300 mA | 5 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/609D | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | SIMILAR TO DO-35, 2 PIN | unknown | EAR99 | 8541.10.00.70 | DO-35 | 2 | ||||||||
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JANTX1N6641
Microchip Technology Inc
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$8.8743 | No | Active | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/609D | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-35, 2 PIN | compliant | |||||||
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1N6641US
Microsemi Corporation
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$9.1749 | No | No | Transferred | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | 2.5 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, D-5D, 2 PIN | unknown | EAR99 | 8541.10.00.70 | 2 | ||||||
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1N6641US
Microchip Technology Inc
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$10.0005 | No | Active | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | 2.5 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5D, 2 PIN | compliant | ||||||||||
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JAN1N6641US
Microchip Technology Inc
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$10.1998 | No | Active | 300 mA | 5 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-XELF-R2 | e0 | MIL-19500/609D | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | SURFACE MOUNT PACKAGE-2 | compliant | |||||||||||||
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JANTX1N6641
Microsemi Corporation
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$10.3224 | No | No | Transferred | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/609D | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | SIMILAR TO DO-35, 2 PIN | unknown | EAR99 | 8541.10.00.70 | DO-35 | 2 | ||
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JANTXV1N6641
Microchip Technology Inc
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$11.0975 | No | Active | 300 mA | 1.1 V | 5 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 2.5 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/609D | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-35, 2 PIN | compliant |