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1N6333
Microsemi Corporation
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$8.6442 | No | No | Transferred | 5.2 mA | 500 mW | 24 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 24 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500/533 | DO-35 | 1 | 175 °C | -65 °C | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | EAR99 | 8541.10.00.50 | Microsemi Corporation | |||||||
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1N6333
Microchip Technology Inc
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$8.6693 | No | Active | 5.2 mA | 500 mW | 24 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 24 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500/533 | DO-35 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
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JAN1N6333
Microchip Technology Inc
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$10.1998 | No | Active | 5.2 mA | 500 mW | 24 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 24 Ω | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||
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JAN1N6333
Microsemi Corporation
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$12.4143 | No | Transferred | 5.2 mA | 500 mW | 24 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 24 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | EAR99 | 8541.10.00.50 | ||||||||||
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JANTX1N6333
Microchip Technology Inc
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$12.8114 | No | Active | 5.2 mA | 500 mW | 24 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Qualified | O-XALF-W2 | e0 | MIL-19500/533F | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||||||
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1N6333US
Microchip Technology Inc
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$15.0825 | No | Active | 5.2 mA | 500 mW | 24 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED, HIGH RELIABILITY | 24 Ω | 5 % | Not Qualified | O-LELF-R2 | e0 | 200 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, B, D-5D, 2 PIN | compliant | ||||||||||||||
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JANTXV1N6333
Microchip Technology Inc
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$15.1162 | No | Active | 5.2 mA | 500 mW | 24 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Qualified | O-LALF-W2 | MIL-19500 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||||||
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JAN1N6333US
Microchip Technology Inc
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$16.4187 | No | Active | 5.2 mA | 50 nA | 500 mW | 24 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 24 Ω | 500 Ω | 18 V | 5 % | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | |||||||||||
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JAN1N6333US/TR
Microchip Technology Inc
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$16.5680 | Active | 5.2 mA | 50 nA | 500 mW | 24 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 24 Ω | 500 Ω | 18 V | 5 % | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.50 | |||||||||||
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JAN1N6333US
Microsemi Corporation
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$16.9384 | No | Transferred | 5.2 mA | 50 nA | 500 mW | 24 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 24 Ω | 500 Ω | 18 V | 5 % | Not Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | MELF-2 | unknown | EAR99 | 8541.10.00.50 | 2 |