Parametric results for: 1N6321%2BJAN under Zener Diodes
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JAN1N6321
Microchip Technology Inc
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$10.1998 | No | Active | 20 mA | 500 mW | 7.5 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 4 Ω | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D PACKAGE-2 | compliant | |||||||||||
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1N6321
Microsemi Corporation
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$10.6743 | No | No | Transferred | 20 mA | 500 mW | 7.5 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 4 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500/533 | DO-35 | 1 | 175 °C | -65 °C | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | EAR99 | 8541.10.00.50 | ||||||||
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JAN1N6321
Microsemi Corporation
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$12.4143 | No | Transferred | 20 mA | 500 mW | 7.5 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 4 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | not_compliant | EAR99 | 8541.10.00.50 | DO-35 | 2 | ||||||||
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JANTX1N6321
Microchip Technology Inc
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$15.0533 | No | Active | 20 mA | 500 mW | 7.5 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||||
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JANTXV1N6321
Microchip Technology Inc
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$15.1162 | No | Active | 20 mA | 500 mW | 7.5 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||||
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1N6321US
Microchip Technology Inc
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$15.2239 | No | Active | 20 mA | 500 mW | 7.5 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED, HIGH RELIABILITY | 4 Ω | 5 % | Not Qualified | O-LELF-R2 | e0 | 200 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, B, D-5D, 2 PIN | compliant | ||||||||||||||
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1N6321US/TR
Microchip Technology Inc
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$15.2675 | Active | 20 mA | 500 mW | 7.5 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED, HIGH RELIABILITY | 4 Ω | 5 % | Not Qualified | O-LELF-R2 | e0 | 200 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.50 | ||||||||||||||
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JAN1N6321US
Microchip Technology Inc
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$16.2295 | No | Active | 20 mA | 2 µA | 500 mW | 7.5 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 4 Ω | 400 Ω | 5 V | 5 % | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | |||||||||||
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1N6321
Microchip Technology Inc
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$16.5987 | No | Active | 20 mA | 500 mW | 7.5 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 4 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500/533 | DO-35 | 1 | 200 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | MICRO MINIATURE, GLASS PACKAGE-2 | compliant | |||||||||||
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JANTXV1N6321
Microsemi Corporation
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$18.3770 | No | Transferred | 20 mA | 500 mW | 7.5 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown |