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1N6309
Microsemi Corporation
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$8.6442 | No | No | Transferred | 20 mA | 500 mW | 2.4 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 30 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500/533 | DO-35 | 1 | 175 °C | -65 °C | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35 | DO-35, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.50 | ||||||||
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1N6309
Microchip Technology Inc
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$8.6693 | No | Active | 20 mA | 500 mW | 2.4 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 30 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500/533 | DO-35 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||||
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JAN1N6309
Microchip Technology Inc
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$9.8013 | No | Active | 20 mA | 500 mW | 2.4 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Qualified | O-XALF-W2 | e0 | MIL-19500/533F | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||||||||
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JAN1N6309
Microsemi Corporation
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$10.8885 | No | No | Transferred | 20 mA | 500 mW | 2.4 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | EAR99 | 8541.10.00.50 | ||||||||||||
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JANTX1N6309
Microchip Technology Inc
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$12.8114 | No | Active | 20 mA | 500 mW | 2.4 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Qualified | O-XALF-W2 | e0 | MIL-19500/533F | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||||||||
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1N6309US
Microsemi Corporation
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$13.8338 | No | No | Transferred | 20 mA | 500 mW | 2.4 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED, HIGH RELIABILITY | 30 Ω | 5 % | Not Qualified | O-LELF-R2 | e0 | 150 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, B, D-5D, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.50 | |||||||||||
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JANTXV1N6309
Microchip Technology Inc
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$14.4977 | No | Active | 20 mA | 500 mW | 2.4 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Qualified | O-XALF-W2 | e0 | MIL-19500/533F | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||||||||
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1N6309US
Microchip Technology Inc
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$15.2239 | No | Active | 20 mA | 500 mW | 2.4 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED, HIGH RELIABILITY | 30 Ω | 5 % | Not Qualified | O-LELF-R2 | e0 | 150 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, B, D-5D, 2 PIN | compliant | Microchip | ||||||||||||||
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JAN1N6309US
Microchip Technology Inc
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$15.7481 | No | Active | 20 mA | 100 µA | 500 mW | 2.4 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | HIGH RELIABILITY, METALLURGICALLY BONDED | 30 Ω | 1.2 kΩ | 1 V | 5 % | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | ||||||||||
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JANTXV1N6309
Microsemi Corporation
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$16.1007 | No | No | Transferred | 20 mA | 500 mW | 2.4 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | -65 °C | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | EAR99 | 8541.10.00.50 | Microsemi Corporation |