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1N6111AE3
Microchip Technology Inc
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$13.6121 | Yes | Active | 2 W | SILICON | 15.2 V | TRANS VOLTAGE SUPPRESSOR DIODE | BIDIRECTIONAL | SINGLE | NO | 12.2 V | 1 | AVALANCHE | HIGH RELIABILITY | 500 W | O-LALF-W2 | e3 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2 | compliant | ||||||
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1N6111AE3/TR
Microchip Technology Inc
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$13.8171 | Active | 2 W | SILICON | 15.2 V | TRANS VOLTAGE SUPPRESSOR DIODE | BIDIRECTIONAL | SINGLE | NO | 12.2 V | 1 | AVALANCHE | HIGH RELIABILITY | 500 W | O-LALF-W2 | e3 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.50 | ||||
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1N6111AE3
Microsemi Corporation
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Check for Price | Yes | Transferred | 2 W | SILICON | 15.2 V | TRANS VOLTAGE SUPPRESSOR DIODE | BIDIRECTIONAL | SINGLE | NO | 12.2 V | 1 | AVALANCHE | HIGH RELIABILITY | 500 W | O-LALF-W2 | e3 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROSEMI CORP | ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2 | compliant | EAR99 | 8541.10.00.50 |