Parametric results for: 1N6066A under Transient Suppressors

All Filters Additional Feature Breakdown Voltage-Max Breakdown Voltage-Min Breakdown Voltage-Nom Case Connection Clamping Voltage-Max Configuration Diode Capacitance-Min Diode Element Material Diode Type JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Polarity Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Surface Mount Technology

CAPACITANCE IS CAPTURED FROM THE GRAPH 1 HIGH RELIABILITY 5 LOW IMPEDANCE 6

56 hits Apply

137 V 41

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Breakdown Voltage-Min (1)

124 V 46

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Breakdown Voltage-Nom (2)

130 V 11 130.5 V 4

Min (V) - Max (V)

56 hits Apply

ANODE 3 CATHODE 4 ISOLATED 32

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Clamping Voltage-Max (2)

179 V 1 182 V 16

Min (V) - Max (V)

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Configuration (1)

SINGLE 51

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Diode Capacitance-Min (1)

10 nF 1

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Diode Element Material (1)

SILICON 51

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Diode Type (1)

TRANS VOLTAGE SUPPRESSOR DIODE 56

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DO-13 23 DO-202AA 16

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O-MALF-W2 33 O-MEDB-N2 4 O-XALF-W2 13

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e0 26 e3 4

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Manufacturer (18)

Baneasa SA 1 Crydom Inc 3 Defense Logistics Agency 3 Digitron Semiconductors 3 Littelfuse Inc 3 Microchip Technology Inc 6 Microsemi Corporation 14 New England Semiconductor 4 New Jersey Semiconductor Products Inc 1 ProTek Devices 1 Semicon Components Inc 4 Semitronics Corp 1 Sensitron Semiconductors 4 Silicon Transistor Corporation 4 Square D by Schneider Electric 1 ST-Semiconductors Of Indiana Inc 1 STMicroelectronics 1 Vishay Semiconductors 1

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Number of Elements (1)

1 51

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Polarity (1)

BIDIRECTIONAL 56

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Power Dissipation-Max (2)

1 W 40 5 W 1

Min (W) - Max (W)

56 hits Apply

Rep Pk Reverse Voltage-Max (2)

110 V 49 111 V 1

Min (V) - Max (V)

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Reverse Current-Max (1)

5 µA 9

56 hits Apply

Surface Mount (2)

NO 51 YES 4

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Technology (1)

AVALANCHE 51

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