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1N5811US
Microsemi Corporation
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$5.0708 | No | No | Transferred | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WRAP AROUND | END | MICROSEMI CORP | MELF | HERMETIC SEALED, GLASS, MELF-2 | 2 | not_compliant | EAR99 | 8541.10.00.80 | Microsemi Corporation | |||||||||||
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1N5811US
Sensitron Semiconductors
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$6.5963 | No | No | Active | 6 A | 925 mV | 30 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Not Qualified | E-LELF-R2 | e0 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN LEAD | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | MELF | MELF-B, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | ||||||||
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1N5811US
Microchip Technology Inc
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$7.3654 | No | Active | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MELF-2 | compliant | Microchip | ||||||||||||||||
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1N5811USE3
Microchip Technology Inc
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$7.5599 | Yes | Active | 3 A | 875 mV | 30 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | AVALANCHE | HIGH RELIABILITY | ULTRA FAST RECOVERY | 125 A | 1 | O-LELF-R2 | e3 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN OVER NICKEL | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, HERMETIC SEALED, GLASS, B, MELF-2 | compliant | Microchip | |||||||||||||
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1N5811US/TR
Microchip Technology Inc
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$7.5599 | No | Active | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Not Qualified | O-LELF-R2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, E, 2 PIN | compliant | EAR99 | 8541.10.00.80 | Microchip | ||||||||||||||||
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JAN1N5811US
Microchip Technology Inc
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$8.2755 | No | Active | 3 A | 875 mV | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | HIGH RELIABILITY | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5B, 2 PIN | compliant | Microchip | ||||||||||||
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JAN1N5811US/TR
Microchip Technology Inc
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$8.4402 | Active | 3 A | 875 mV | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | HIGH RELIABILITY | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/477 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||
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JANTX1N5811US
Microchip Technology Inc
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$8.6529 | No | Active | 3 A | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MELF-2 | compliant | Microchip | |||||||||||||
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JANTX1N5811US/TR
Microchip Technology Inc
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$8.7995 | Active | 3 A | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | ||||||||||||
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JANTXV1N5811US
Microsemi Corporation
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$9.0640 | No | No | Transferred | 3 A | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, MELF-2 | 2 | not_compliant | EAR99 | 8541.10.00.80 | Microsemi Corporation |