Parametric results for: 1N5809US under Rectifier Diodes

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Manufacturer Part Number: 1n5809us
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1N5809US
Sensitron Semiconductors
$7.4951 No No Active 6 A 925 mV 30 ns 5 µA SILICON RECTIFIER DIODE SINGLE YES 100 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Not Qualified E-LELF-R2 e0 1 175 °C -65 °C ISOLATED 2 GLASS ELLIPTICAL LONG FORM TIN LEAD WRAP AROUND END SENSITRON SEMICONDUCTOR MELF MELF-B, 2 PIN 2 compliant EAR99 8541.10.00.80
1N5809US
Microsemi Corporation
$7.5827 No No Transferred 3 A 30 ns SILICON RECTIFIER DIODE SINGLE YES 100 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 O-LELF-R2 e0 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD OVER NICKEL WRAP AROUND END MICROSEMI CORP MELF HERMETIC SEALED, GLASS, MELF-2 2 not_compliant EAR99 8541.10.00.80 Microsemi Corporation
JAN1N5809US
Microchip Technology Inc
$8.2755 No Active 3 A 875 mV 30 ns 5 W SILICON RECTIFIER DIODE SINGLE YES 100 V 1 HIGH RELIABILITY ULTRA FAST RECOVERY 125 A 1 Qualified O-LELF-R2 e0 MIL-19500/477 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC HERMETIC SEALED, GLASS, D-5B, 2 PIN compliant
1N5809US
Microchip Technology Inc
$8.5946 No Active 3 A 30 ns SILICON RECTIFIER DIODE SINGLE YES 100 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 O-LELF-R2 e0 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD OVER NICKEL WRAP AROUND END MICROCHIP TECHNOLOGY INC HERMETIC SEALED, GLASS, MELF-2 compliant Microchip
JANTX1N5809US
Microchip Technology Inc
$8.6931 No Active 3 A 30 ns 5 W SILICON RECTIFIER DIODE SINGLE YES 100 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Qualified O-LELF-R2 e0 MIL-19500 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC HERMETIC SEALED, GLASS, MELF-2 compliant
1N5809US/TR
Microchip Technology Inc
$8.6931 No Active 3 A 30 ns SILICON RECTIFIER DIODE SINGLE YES 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Not Qualified O-LELF-R2 e0 ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC HERMETIC SEALED, GLASS, E, 2 PIN compliant EAR99 8541.10.00.80
JAN1N5809US
Microsemi Corporation
$10.5281 No No Transferred 3 A 875 mV 30 ns 5 W SILICON RECTIFIER DIODE SINGLE YES 100 V 1 HIGH RELIABILITY ULTRA FAST RECOVERY 125 A 1 Not Qualified O-LELF-R2 e0 MIL-19500/477 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROSEMI CORP HERMETIC SEALED, GLASS, D-5B, 2 PIN 2 unknown EAR99 8541.10.00.80 Microsemi Corporation
JANTX1N5809US
Microsemi Corporation
$12.1550 No No Transferred 3 A 30 ns 5 W SILICON RECTIFIER DIODE SINGLE YES 100 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Not Qualified O-LELF-R2 e0 MIL-19500 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROSEMI CORP HERMETIC SEALED, GLASS, MELF-2 2 not_compliant EAR99 8541.10.00.80 Microsemi Corporation
JANTXV1N5809US
Microchip Technology Inc
$12.2856 No Active 3 A 30 ns 5 W SILICON RECTIFIER DIODE SINGLE YES 100 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Qualified O-LELF-R2 e0 MIL-19500 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC HERMETIC SEALED, GLASS, MELF-2 compliant
JANTXV1N5809US/TR
Microchip Technology Inc
$12.3317 Active 3 A 30 ns 5 W SILICON RECTIFIER DIODE SINGLE YES 100 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Qualified O-LELF-R2 e0 MIL-19500 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WRAP AROUND END MICROCHIP TECHNOLOGY INC unknown EAR99 8541.10.00.80