Parametric results for: 1N5711 under Rectifier Diodes
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1N5711
STMicroelectronics
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$0.0995 | Yes | Active | 15 mA | 410 mV | 430 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 70 V | 1 | SCHOTTKY | FAST SWITCHING | 1 | Not Qualified | O-LALF-W2 | e3 | DO-35 | 200 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Matte Tin (Sn) - annealed | WIRE | AXIAL | STMICROELECTRONICS | DO-35 | DO-35, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.70 | STMicroelectronics | ||||||||||
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1N5711W-7-F
Diodes Incorporated
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$0.1119 | Yes | Yes | Active | 15 mA | 410 mV | 1 ns | 333 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 70 V | 1 | SCHOTTKY | 1 | Not Qualified | R-PDSO-G2 | e3 | 1 | 125 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | GREEN, PLASTIC PACKAGE-2 | 2 | compliant | EAR99 | 8541.10.00.70 | ||||||||||||
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1N5711WS-7-F
Diodes Incorporated
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$0.1537 | Yes | Yes | Active | 15 mA | 1 V | 1 ns | 200 nA | 150 mW | SILICON | 70 V | RECTIFIER DIODE | SINGLE | YES | 70 V | 1 | SCHOTTKY | FAST RECOVERY | 1 | 50 V | Not Qualified | R-PDSO-G2 | e3 | MIL-STD-202 | 1 | 125 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | SOD-323, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.70 | |||||||
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JANHCA1N5711
Microchip Technology Inc
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$4.9914 | No | Active | 33 mA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | 1 | Qualified | S-XUUC-N2 | e0 | CATHODE | 2 | UNSPECIFIED | SQUARE | UNCASED CHIP | Tin/Lead (Sn/Pb) | NO LEAD | UPPER | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||||||||||||||||
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1N5711-1
Microsemi Corporation
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$6.0490 | No | No | Transferred | 33 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | SCHOTTKY | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/444 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | |||||||||||||||||
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JAN1N5711-1
Microchip Technology Inc
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$6.1426 | No | Active | 33 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | SCHOTTKY | METALLURGICALLY BONDED | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500/444 | DO-35 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||||||||
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JAN1N5711-1/TR
Microchip Technology Inc
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$6.2319 | No | Active | 33 mA | 1 V | 200 nA | SILICON | 70 V | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 1 | 50 V | O-LALF-W2 | e0 | MIL-PRF-19500; MIL-STD-750 | DO-204AH | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||||||
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1N5711
Microsemi Corporation
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$6.7987 | No | No | Transferred | 33 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | SCHOTTKY | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | not_compliant | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||||||||
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1N5711
Microchip Technology Inc
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$6.8846 | No | Active | 33 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | SCHOTTKY | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | Microchip | |||||||||||||||||||
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1N5711/TR
Microchip Technology Inc
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$7.0138 | Active | 33 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | SCHOTTKY | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.70 | Microchip |