Parametric results for: 1N5681 under Varactors
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1N5687B
New Jersey Semiconductor Products Inc
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Check for Price | Contact Manufacturer | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | 1 | 2.6 | 500 | ABRUPT | 150 °C | -65 °C | ISOLATED | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | ||||||||||||||||||||||||||||||||
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1N5690B
New Jersey Semiconductor Products Inc
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Check for Price | Contact Manufacturer | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | 1 | 2.6 | 450 | ABRUPT | 150 °C | -65 °C | ISOLATED | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | ||||||||||||||||||||||||||||||||
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1N5691B
New Jersey Semiconductor Products Inc
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Check for Price | Contact Manufacturer | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | 1 | 2.6 | 400 | ABRUPT | 150 °C | -65 °C | ISOLATED | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | ||||||||||||||||||||||||||||||||
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1N5681
Cobham Semiconductor Solutions
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Check for Price | No | No | Transferred | 6.8 pF | 400 mW | SILICON | 45 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 1 | 20 % | 3.1 | 600 | ABRUPT | Not Qualified | O-LALF-W2 | e0 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | AEROFLEX/METELICS INC | unknown | DO-7 | O-LALF-W2 | 2 | EAR99 | 8541.10.00.80 | |||||||||||
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1N5688A
New Jersey Semiconductor Products Inc
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Check for Price | Contact Manufacturer | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | 1 | 2.6 | 500 | ABRUPT | 150 °C | -65 °C | ISOLATED | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | ||||||||||||||||||||||||||||||||
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1N5681BCO
Aeroflex Inc
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Check for Price | Yes | Transferred | 6.8 pF | 20 nA | SILICON | 45 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5 % | 3.1 | 600 | 40 V | Not Qualified | X-XUUC-N | 150 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | KNOX SEMICONDUCTORS INC | unknown | DIE | X-XUUC-N | 1 | EAR99 | 8541.10.00.40 | |||||||||||||
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1N5681AB
Spectrum Control
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Check for Price | Active | 6.8 pF | 400 mW | SILICON | 45 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 1 | SUPER Q | 5 % | 3.1 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 600 | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | API TECHNOLOGIES CORP | compliant | DO-7 | O-LALF-W2 | 2 | EAR99 | 8541.10.00.80 | ||||||||||||
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1N5681B
International Semiconductor Inc
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Check for Price | Obsolete | 6.8 pF | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 40 V | 1 | LOW LEAKAGE | 5 % | 3.1 | 600 | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | INTERNATIONAL SEMICONDUCTOR INC | unknown | O-LALF-W2 | EAR99 | 8541.10.00.80 | |||||||||||||||
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1N5688
New Jersey Semiconductor Products Inc
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Check for Price | Contact Manufacturer | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | 1 | 2.6 | 500 | ABRUPT | 175 °C | -65 °C | ISOLATED | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | ||||||||||||||||||||||||||||||||
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1N5681ACO
Cobham Semiconductor Solutions
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Check for Price | Yes | Transferred | 6.8 pF | SILICON | 45 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 10 % | 3.1 | 600 | Not Qualified | X-XUUC-N | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | AEROFLEX/METELICS INC | unknown | DIE | X-XUUC-N | 1 | EAR99 | 8541.10.00.40 |