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1 - 10 of 117 results
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1N5616
Microchip Technology Inc
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$3.2944 | No | Active | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY, METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A PACKAGE-2 | compliant | |||||||||||||||
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1N5616/TR
Microchip Technology Inc
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$3.5765 | Active | 1 A | 2 µs | 500 nA | SILICON | 440 V | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 30 A | 1 | 400 V | O-LALF-W2 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||||
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JANTX1N5616
Microsemi Corporation
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$3.8988 | No | No | Transferred | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS, A PACKAGE-2 | unknown | 2 | EAR99 | 8541.10.00.80 | Microsemi Corporation | |||||||||
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1N5616C.TR
Semtech Corporation
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$4.1059 | Transferred | 1 A | 1.2 V | 3 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 50 A | 1 | 400 V | E-XALF-W2 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ELLIPTICAL | LONG FORM | WIRE | AXIAL | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 | |||||||||||||
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1N5616
Microsemi Corporation
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$4.1874 | No | Transferred | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY, METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS, A PACKAGE-2 | unknown | |||||||||||||||
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JAN1N5616
Microchip Technology Inc
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$4.6135 | No | Active | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A PACKAGE-2 | compliant | ||||||||||||||
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JANTX1N5616
Microchip Technology Inc
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$5.1470 | No | Active | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A PACKAGE-2 | compliant | ||||||||||||||
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JAN1N5616
Microsemi Corporation
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$5.6217 | No | No | Transferred | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS, A PACKAGE-2 | unknown | 2 | EAR99 | 8541.10.00.80 | DO-204 | |||||||||
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1N5616US
Microsemi Corporation
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$5.6512 | No | No | Transferred | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Not Qualified | O-LELF-R2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, D-5A, 2 PIN | unknown | 2 | EAR99 | 8541.10.00.80 | ||||||||||||||
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1N5616US
Microchip Technology Inc
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$7.2688 | No | Active | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | AVALANCHE | HIGH RELIABILITY | 1 | Not Qualified | O-LELF-R2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5A, 2 PIN | compliant |