Parametric results for: 1N5525B%20JAN under Zener Diodes
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1N5525B-1
Microchip Technology Inc
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$2.1368 | No | Active | 1 mA | 500 mW | 6.2 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-XALF-W2 | e0 | MIL-19500/437E | DO-35 | 1 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-7, 2 PIN | compliant | |||||||||||
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1N5525B
Microchip Technology Inc
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$2.1368 | No | Active | 1 mA | 500 mW | 6.2 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETICALLY SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||
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1N5525BE3
Microchip Technology Inc
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$2.2861 | Yes | Active | 1 mA | 500 mW | 6.2 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 30 Ω | 5 % | O-LALF-W2 | e3 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-35, 2 PIN | compliant | ||||||||||||
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1N5525BE3/TR
Microchip Technology Inc
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$2.5224 | Yes | Active | 1 mA | 1 µA | 500 mW | 6.2 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 30 Ω | 5 V | 5 % | O-LALF-W2 | e3 | MIL-STD-750 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||
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JAN1N5525B-1
Microchip Technology Inc
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$5.6862 | No | Active | 1 mA | 500 mW | 6.2 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-204AH | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, DO-35, 2 PIN | compliant | |||||||||
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1N5525BUR-1
Microchip Technology Inc
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$6.6796 | No | Active | 1 mA | 500 mW | 6.2 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | AVALANCHE | METALLURGICALLY BONDED | 5 % | Not Qualified | O-LELF-R2 | e0 | DO-213AA | 1 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MLL34, MELF-2 | compliant | ||||||||||||
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JANTX1N5525B-1
Microchip Technology Inc
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$7.3888 | No | Active | 1 mA | 500 mW | 6.2 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, DO-35, 2 PIN | compliant | ||||||||||
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JANTX1N5525B-1
Cobham Semiconductor Solutions
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$7.6802 | Transferred | 1 µA | 500 mW | 6.2 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-PALF-W2 | e0 | MIL-19500/437 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | AEROFLEX/METELICS INC | HERMETIC SEALED PACKAGE-2 | unknown | DO-35 | 2 | EAR99 | 8541.10.00.50 | |||||||
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JANHCA1N5525B
Microchip Technology Inc
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$7.8494 | No | Active | 1 mA | 500 mW | 6.2 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | YES | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | S-XXUC-N2 | e0 | MIL-19500/437E | CATHODE | 2 | UNSPECIFIED | SQUARE | UNCASED CHIP | Tin/Lead (Sn/Pb) | NO LEAD | UNSPECIFIED | MICROCHIP TECHNOLOGY INC | DIE-2 | compliant | |||||||||||||
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JANTXV1N5525B-1
Microchip Technology Inc
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$9.3949 | No | Active | 1 mA | 500 mW | 6.2 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, DO-35, 2 PIN | compliant |