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JANTX1N5461B
Micrometrics Inc
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Check for Price | Obsolete | 6.8 pF | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | 600 | ABRUPT | ISOLATED | MICROMETRICS INC | unknown | EAR99 | ||||||||||||||||||||||||||||||||
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JANTXV1N5461B
Micrometrics Inc
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Check for Price | Obsolete | 6.8 pF | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | 600 | ABRUPT | ISOLATED | MICROMETRICS INC | unknown | EAR99 | ||||||||||||||||||||||||||||||||
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1N5461BCO
Cobham Semiconductor Solutions
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Check for Price | No | Transferred | 6.8 pF | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5 % | 2.7 | 600 | Not Qualified | X-XUUC-N | e0 | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | TIN LEAD | NO LEAD | UPPER | AEROFLEX/MICROMETRICS | unknown | EAR99 | DIE | X-XUUC-N | 1 | 8541.10.00.40 | ||||||||||||||||
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1N5461B
Loral Microwave-Fsi
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Check for Price | No | Obsolete | 6.8 pF | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | 2.7 | 600 | ABRUPT | e0 | ISOLATED | Tin/Lead (Sn/Pb) | LORAL MICROWAVE-FSI | unknown | EAR99 | ||||||||||||||||||||||||||||
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JANTXV1N5461B
CRYSTALONICS Inc
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Check for Price | Obsolete | 6.8 pF | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 1 | 5 % | 2.7 | 600 | ABRUPT | Not Qualified | O-XALF-W2 | MIL-19500/436A | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | CRYSTALONICS INC | unknown | EAR99 | DO-7 | O-XALF-W2 | 2 | 8541.10.00.80 | ||||||||||||||||
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1N5461B
CRYSTALONICS Inc
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Check for Price | Contact Manufacturer | 6.8 pF | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | 5 % | 2.7 | 600 | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | CRYSTALONICS INC | unknown | EAR99 | DO-7 | O-LALF-W2 | 2 | 8541.10.00.80 | |||||||||||||||
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1N5461BCHIP
Msi Electronics Inc
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Check for Price | Obsolete | 6.8 pF | 0.02 pA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | HIGH Q | 5 % | 2.7 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 600 | 25 V | ABRUPT | Not Qualified | X-XUUC-N | 175 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | MSI ELECTRONICS INC | unknown | EAR99 | X-XUUC-N | 8541.10.00.40 | ||||||||||||||||
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JANTXV1N5461B
Cobham PLC
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Check for Price | No | Transferred | 6.8 pF | 0.02 pA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | 5 % | 2.7 | 600 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | e0 | MIL | DO-7 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | unknown | EAR99 | DO-7 | O-LALF-W2 | 2 | 8541.10.00.80 | |||||||
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1N5461BCO
MACOM
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Check for Price | Active | 6.8 pF | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5 % | 2.7 | 600 | ABRUPT | Not Qualified | X-XUUC-N | e0 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | TIN LEAD | NO LEAD | UPPER | M/A-COM TECHNOLOGY SOLUTIONS INC | compliant | EAR99 | X-XUUC-N | 8541.10.00.40 | |||||||||||||||||
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JAN1N5461B
Cobham PLC
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Check for Price | No | Transferred | 6.8 pF | 0.02 pA | 400 mW | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 30 V | 1 | 5 % | 2.7 | 600 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | e0 | MIL | DO-7 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | unknown | EAR99 | DO-7 | O-LALF-W2 | 2 | 8541.10.00.80 |