Parametric results for: 1N5461B%2BJAN under Varactors

Filter Your Search

1 - 10 of 40 results

|
-
-
-
Manufacturer Part Number: 1n5461b
Select parts from the table below to compare.
Compare
Compare
JANTX1N5461B
Micrometrics Inc
Check for Price Obsolete 6.8 pF 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 30 V 1 600 ABRUPT ISOLATED MICROMETRICS INC unknown EAR99
JANTXV1N5461B
Micrometrics Inc
Check for Price Obsolete 6.8 pF 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 30 V 1 600 ABRUPT ISOLATED MICROMETRICS INC unknown EAR99
1N5461BCO
Cobham Semiconductor Solutions
Check for Price No Transferred 6.8 pF SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 5 % 2.7 600 Not Qualified X-XUUC-N e0 NOT SPECIFIED NOT SPECIFIED UNSPECIFIED UNSPECIFIED UNCASED CHIP TIN LEAD NO LEAD UPPER AEROFLEX/MICROMETRICS unknown EAR99 DIE X-XUUC-N 1 8541.10.00.40
1N5461B
Loral Microwave-Fsi
Check for Price No Obsolete 6.8 pF 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 30 V 1 2.7 600 ABRUPT e0 ISOLATED Tin/Lead (Sn/Pb) LORAL MICROWAVE-FSI unknown EAR99
JANTXV1N5461B
CRYSTALONICS Inc
Check for Price Obsolete 6.8 pF 400 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 5 % 2.7 600 ABRUPT Not Qualified O-XALF-W2 MIL-19500/436A ISOLATED 2 UNSPECIFIED ROUND LONG FORM WIRE AXIAL CRYSTALONICS INC unknown EAR99 DO-7 O-XALF-W2 2 8541.10.00.80
1N5461B
CRYSTALONICS Inc
Check for Price Contact Manufacturer 6.8 pF 400 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 30 V 1 5 % 2.7 600 ABRUPT Not Qualified O-LALF-W2 DO-7 ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL CRYSTALONICS INC unknown EAR99 DO-7 O-LALF-W2 2 8541.10.00.80
1N5461BCHIP
Msi Electronics Inc
Check for Price Obsolete 6.8 pF 0.02 pA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 30 V 1 HIGH Q 5 % 2.7 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 600 25 V ABRUPT Not Qualified X-XUUC-N 175 °C UNSPECIFIED UNSPECIFIED UNCASED CHIP NO LEAD UPPER MSI ELECTRONICS INC unknown EAR99 X-XUUC-N 8541.10.00.40
JANTXV1N5461B
Cobham PLC
Check for Price No Transferred 6.8 pF 0.02 pA 400 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 30 V 1 5 % 2.7 600 25 V ABRUPT Not Qualified O-LALF-W2 e0 MIL DO-7 150 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL KNOX SEMICONDUCTORS INC unknown EAR99 DO-7 O-LALF-W2 2 8541.10.00.80
1N5461BCO
MACOM
Check for Price Active 6.8 pF SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 5 % 2.7 600 ABRUPT Not Qualified X-XUUC-N e0 NOT SPECIFIED NOT SPECIFIED ISOLATED UNSPECIFIED UNSPECIFIED UNCASED CHIP TIN LEAD NO LEAD UPPER M/A-COM TECHNOLOGY SOLUTIONS INC compliant EAR99 X-XUUC-N 8541.10.00.40
JAN1N5461B
Cobham PLC
Check for Price No Transferred 6.8 pF 0.02 pA 400 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 30 V 1 5 % 2.7 600 25 V ABRUPT Not Qualified O-LALF-W2 e0 MIL DO-7 150 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL KNOX SEMICONDUCTORS INC unknown EAR99 DO-7 O-LALF-W2 2 8541.10.00.80