Parametric results for: 1N5441B under Varactors

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Manufacturer Part Number: 1n5441b
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JAN1N5441B
MACOM
Check for Price Active 6.8 pF 400 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 5 % 2.7 600 ABRUPT Not Qualified O-LALF-W2 e0 MIL DO-7 NOT SPECIFIED NOT SPECIFIED ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL M/A-COM TECHNOLOGY SOLUTIONS INC O-LALF-W2 compliant EAR99 8541.10.00.80
1N5441B
Codi Semiconductor Inc
Check for Price No Obsolete 6.8 pF VARIABLE CAPACITANCE DIODE SINGLE NO 30 V 1 2.8 450 ABRUPT e0 ISOLATED Tin/Lead (Sn/Pb) CODI SEMICONDUCTOR INC unknown EAR99
1N5441BCO
Cobham PLC
Check for Price No Transferred 6.8 pF 20 nA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 5 % 2.5 450 25 V Not Qualified X-XUUC-N e0 150 °C -65 °C UNSPECIFIED UNSPECIFIED UNCASED CHIP TIN LEAD NO LEAD UPPER KNOX SEMICONDUCTORS INC X-XUUC-N unknown EAR99 8541.10.00.40
1N5441BCO
Aeroflex Inc
Check for Price No Transferred 6.8 pF 20 nA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 5 % 2.5 450 25 V Not Qualified X-XUUC-N e0 150 °C -65 °C UNSPECIFIED UNSPECIFIED UNCASED CHIP TIN LEAD NO LEAD UPPER KNOX SEMICONDUCTORS INC X-XUUC-N unknown EAR99 8541.10.00.40 DIE 1
JANTXV1N5441B
MACOM
Check for Price Active 6.8 pF 400 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 5 % 2.7 600 ABRUPT Not Qualified O-LALF-W2 e0 MIL DO-7 NOT SPECIFIED NOT SPECIFIED ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL M/A-COM TECHNOLOGY SOLUTIONS INC O-LALF-W2 compliant EAR99 8541.10.00.80
1N5441B
Freescale Semiconductor
Check for Price No Obsolete 6.8 pF VARIABLE CAPACITANCE DIODE NO 30 V 450 e0 Tin/Lead (Sn/Pb) MOTOROLA SEMICONDUCTOR PRODUCTS unknown
1N5441B
Microsemi Corporation
Check for Price No No Obsolete 6.8 pF 400 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 HIGH RELIABILITY 5 % 2.5 450 ABRUPT Not Qualified O-LALF-W2 e0 DO-7 175 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL MICROSEMI CORP O-LALF-W2 unknown EAR99 8541.10.00.80
1N5441B
Msi Electronics Inc
Check for Price Obsolete 6.8 pF 20 nA 400 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 30 V 1 GOOD Q 5 % 2.5 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 450 25 V ABRUPT Not Qualified O-LALF-W2 175 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL MSI ELECTRONICS INC O-LALF-W2 unknown EAR99 8541.10.00.80
1N5441B
Motorola Mobility LLC
Check for Price Obsolete 6.8 pF 20 nA 400 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 5 % 2.5 ULTRA HIGH FREQUENCY 450 25 V ABRUPT Not Qualified O-LALF-W2 e0 DO-204AA 175 °C ISOLATED 2 GLASS ROUND LONG FORM Tin/Lead (Sn/Pb) WIRE AXIAL MOTOROLA INC O-LALF-W2 unknown EAR99 8541.10.00.80
1N5441B
Frequency Sources
Check for Price No Transferred 6.8 pF VARIABLE CAPACITANCE DIODE NO 30 V 450 e0 Tin/Lead (Sn/Pb) FREQUENCY SOURCES unknown EAR99