Parametric results for: 1N5415%2BJANTXV under Rectifier Diodes
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JANTXV1N5415
Semtech Corporation
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$1.0000 | Transferred | 4.5 A | 1.1 V | 150 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | FAST SOFT RECOVERY | 150 A | 1 | Qualified | O-XALF-W2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | SEMTECH CORP | HERMETIC SEALED, G4, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||
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1N5415
Microsemi Corporation
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$6.6433 | No | No | Transferred | 3 A | 15 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETICALLY SEALED GLASS PACKAGE, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.80 | |||||||||
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1N5415
Microchip Technology Inc
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$6.7275 | No | Active | 3 A | 15 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||
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JAN1N5415
Microchip Technology Inc
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$6.8375 | No | Active | 3 A | 1.5 V | 150 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 80 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||
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JANTX1N5415
Microchip Technology Inc
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$7.8687 | No | Active | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/411L | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-41, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | DO-41 | |||||||||||
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JAN1N5415
Microsemi Corporation
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$8.6487 | No | Transferred | 3 A | 1.5 V | 150 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS, B PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.80 | DO-41 | Microsemi Corporation | |||
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JAN1N5415US
Microchip Technology Inc
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$9.0135 | No | Active | 3 A | 1.5 V | 150 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY | FAST RECOVERY | 80 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | MELF-2 | compliant | |||||||||
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JANTX1N5415US
Microchip Technology Inc
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$9.1649 | No | Active | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-LELF-R2 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | GLASS PACKAGE-2 | compliant | |||||||||||||||||
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JANTX1N5415
Microsemi Corporation
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$10.0732 | No | Transferred | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/411L | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | SIMILAR TO DO-41, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.80 | DO-41 | |||||||||
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JAN1N5415US
Microsemi Corporation
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$10.4907 | No | Transferred | 3 A | 1.5 V | 150 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | MELF-2 | unknown | EAR99 | 8541.10.00.80 |