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1N5314UR-1/TR
Microchip Technology Inc
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$22.6706 | No | Active | 2.9 V | 4.7 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | EAR99 | 8541.10.00.70 | |||||||||
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JANTX1N5314UR-1/TR
Microchip Technology Inc
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$24.8630 | Active | 2.9 V | 4.7 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.50 | |||||||
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JAN1N5314UR-1/TR
Microchip Technology Inc
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$37.9545 | Active | 2.9 V | 4.7 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.70 | |||||||
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1N5314UR-1-TR
Microsemi Corporation
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Check for Price | No | No | Transferred | 2.9 V | 4.7 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | O-LELF-R2 | compliant | EAR99 | 8541.10.00.70 | DO-213AB | 2 |