Parametric results for: 1N5299-1 under Current Regulator Diodes
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1N5299-1
Microsemi Corporation
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$17.5823 | No | No | Transferred | 1.45 V | 1.2 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 640 kΩ | Not Qualified | O-XALF-W2 | e0 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-7 | DO-35, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | |||||||
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1N5299-1
Microchip Technology Inc
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$19.1604 | No | Active | 1.45 V | 1.2 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 640 kΩ | Not Qualified | O-XALF-W2 | e0 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||||
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JAN1N5299-1
Microchip Technology Inc
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$32.4611 | No | Active | 1.45 V | 1.2 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 640 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||
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JAN1N5299-1
Microsemi Corporation
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$33.3300 | No | No | Transferred | 1.45 V | 1.2 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XALF-W2 | e0 | MIL-19500/463 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||
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JANTX1N5299-1
Microchip Technology Inc
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$35.0186 | No | Active | 1.45 V | 1.2 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 640 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||
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JANTXV1N5299-1
Microchip Technology Inc
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$37.5039 | No | Active | 1.45 V | 1.2 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 640 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||
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JANTXV1N5299-1
Microsemi Corporation
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$38.5110 | No | No | Transferred | 1.45 V | 1.2 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XALF-W2 | e0 | MIL-19500/463 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-7 | DO-35, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||
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JANS1N5299-1
Microchip Technology Inc
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$102.8722 | No | Active | 1.45 V | 1.2 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 640 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||
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JANS1N5299-1/TR
Microchip Technology Inc
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$103.0213 | No | Active | 1.45 V | 1.2 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 640 kΩ | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||||
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JANTX1N5299-1
MACOM
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Check for Price | Yes | Transferred | 1.45 V | 1.2 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | HIGH SOURCE IMPEDANCE | Qualified | O-LALF-W2 | MIL-19500 | DO-7 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | M/A-COM TECHNOLOGY SOLUTIONS INC | GLASS PACKAGE-2 | compliant | EAR99 | 8541.10.00.70 |