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JAN1N5186
Microchip Technology Inc
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$7.6321 | No | Active | 3 A | 1.5 V | 150 ns | 2 µA | SILICON | 120 V | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 100 V | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||
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1N5186
Microsemi Corporation
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$7.7700 | No | No | Transferred | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | HIGH RELIABILITY | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | unknown | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | EAR99 | 8541.10.00.80 | Microsemi Corporation | |||||||||||
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1N5186
Microchip Technology Inc
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$8.0824 | No | Active | 3 A | 1.5 V | 150 ns | 2 µA | SILICON | 120 V | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 100 V | Not Qualified | O-LALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||
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JANTX1N5186
Microchip Technology Inc
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$8.7637 | No | Active | 3 A | 1.5 V | 150 ns | 2 µA | SILICON | 120 V | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 100 V | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||
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1N5186US
Microchip Technology Inc
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$9.2337 | No | Active | 3 A | 1.5 V | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY, HIGH SURGE CAPABILITY | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | HERMETIC SEALED, GLASS, D-5B, 2 PIN | |||||||||||||
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JAN1N5186
Microsemi Corporation
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$9.5183 | No | Transferred | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/424A | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROSEMI CORP | unknown | SIMILAR TO DO-41, 2 PIN | 2 | EAR99 | 8541.10.00.80 | Microsemi Corporation | ||||||||||||
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1N5186US
Microsemi Corporation
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$9.5183 | No | No | Transferred | 3 A | 1.5 V | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY, HIGH SURGE CAPABILITY | FAST RECOVERY | 80 A | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | unknown | HERMETIC SEALED, GLASS, D-5B, 2 PIN | 2 | EAR99 | 8541.10.00.80 | Microsemi Corporation | ||||||||
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JANTXV1N5186
Microchip Technology Inc
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$9.6512 | No | Active | 3 A | 1.5 V | 150 ns | 2 µA | SILICON | 120 V | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 100 V | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||
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JANTX1N5186
Microsemi Corporation
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$10.5281 | No | Transferred | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/424A | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROSEMI CORP | unknown | SIMILAR TO DO-41, 2 PIN | 2 | EAR99 | 8541.10.00.80 | Microsemi Corporation | DO-41 | ||||||||||
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JANTXV1N5186
Microsemi Corporation
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$11.5940 | No | Transferred | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/424A | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROSEMI CORP | unknown | SIMILAR TO DO-41, 2 PIN | 2 | EAR99 | 8541.10.00.80 |