Parametric results for: 1N4800 under Varactors
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1N4800ACO
Cobham Semiconductor Solutions
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Check for Price | Obsolete | 100 pF | SILICON | 17 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 10 % | 1.8083 | 15 | ABRUPT | Not Qualified | X-XUUC-N | e0 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | TIN LEAD | NO LEAD | UPPER | AEROFLEX/MICROMETRICS | DIE | X-XUUC-N | 1 | unknown | EAR99 | 8541.10.00.40 | ||||||||||||
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1N4800ACO
Cobham PLC
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Check for Price | No | Transferred | 100 pF | 5 nA | SILICON | 17 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 10 % | 1.8083 | 15 | 15 V | Not Qualified | X-XUUC-N | e0 | 150 °C | -65 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | TIN LEAD | NO LEAD | UPPER | KNOX SEMICONDUCTORS INC | DIE | X-XUUC-N | 1 | unknown | EAR99 | 8541.10.00.40 | |||||||||||
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1N4800B
International Semiconductor Inc
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Check for Price | Obsolete | 100 pF | 400 mW | SILICON | 15 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 15 V | 1 | HIGH Q, LOW LEAKAGE | 5 % | 2.24 | 15 | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | INTERNATIONAL SEMICONDUCTOR INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | |||||||||||||
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1N4800CO
Cobham Semiconductor Solutions
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Check for Price | Obsolete | 100 pF | SILICON | 17 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 20 % | 1.8083 | 15 | ABRUPT | Not Qualified | X-XUUC-N | e0 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | TIN LEAD | NO LEAD | UPPER | AEROFLEX/MICROMETRICS | DIE | X-XUUC-N | 1 | unknown | EAR99 | 8541.10.00.40 | ||||||||||||
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1N4800
New Jersey Semiconductor Products Inc
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Check for Price | Contact Manufacturer | SILICON | 15 V | VARIABLE CAPACITANCE DIODE | SINGLE | 1 | 2.24 | 750 | ABRUPT | 150 °C | -65 °C | ISOLATED | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | |||||||||||||||||||||||||||||
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1N4800B
Codi Semiconductor Inc
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Check for Price | No | Obsolete | 100 pF | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 15 V | 1 | 2.33 | 15 | ABRUPT | e0 | ISOLATED | Tin/Lead (Sn/Pb) | CODI SEMICONDUCTOR INC | unknown | EAR99 | ||||||||||||||||||||||||||
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1N4800CCO
Cobham PLC
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Check for Price | Obsolete | 100 pF | 5 nA | SILICON | 17 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 2 % | 1.8083 | 15 | 15 V | ABRUPT | Not Qualified | X-XUUC-N | 150 °C | -65 °C | ISOLATED | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | KNOX SEMICONDUCTORS INC | DIE | X-XUUC-N | 1 | unknown | EAR99 | 8541.10.00.40 | ||||||||||||
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1N4800
Eastron Corp
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Check for Price | No | Obsolete | 100 pF | 17 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 15 V | 1 | 2.24 | 15 | ABRUPT | e0 | ISOLATED | Tin/Lead (Sn/Pb) | EASTRON CORP | unknown | EAR99 | |||||||||||||||||||||||||
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1N4800B
Msi Electronics Inc
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Check for Price | Obsolete | 100 pF | 0.005 pA | 400 mW | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 15 V | 1 | 5 % | 1.7857 | 15 | 15 V | ABRUPT | Not Qualified | O-LALF-W2 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MSI ELECTRONICS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | |||||||||||||
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1N4800
onsemi
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Check for Price | Obsolete | VARIABLE CAPACITANCE DIODE | ON SEMICONDUCTOR | unknown | EAR99 |