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1N4788
Cobham PLC
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Check for Price | No | Transferred | 10 pF | 5 nA | 500 mW | SILICON | 28 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 25 V | 1 | 20 % | 2.34 | 15 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | e0 | DO-7 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | ||||||||
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1N4788A
Spectrum Control
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Check for Price | Active | 10 pF | 0.005 pA | 400 mW | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 25 V | 1 | 10 % | 2.1692 | 15 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | SPECTRUM CONTROL INC | compliant | EAR99 | 8541.10.00.80 | ||||||||||||||
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1N4788C
International Semiconductor Inc
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Check for Price | Obsolete | 10 pF | 400 mW | SILICON | 25 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 25 V | 1 | HIGH Q, LOW LEAKAGE | 2 % | 2.46 | 15 | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | INTERNATIONAL SEMICONDUCTOR INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||||
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1N4788B
Cobham Semiconductor Solutions
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Check for Price | No | No | Obsolete | 10 pF | 500 mW | SILICON | 28 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 1 | 5 % | 2.34 | 15 | ABRUPT | Not Qualified | O-LALF-W2 | e0 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | AEROFLEX/MICROMETRICS | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||
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1N4788CO
Cobham Semiconductor Solutions
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Check for Price | Obsolete | 10 pF | SILICON | 28 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 20 % | 2.1692 | 15 | ABRUPT | Not Qualified | X-XUUC-N | e0 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | TIN LEAD | NO LEAD | UPPER | AEROFLEX/MICROMETRICS | X-XUUC-N | unknown | EAR99 | 8541.10.00.40 | DIE | 1 | |||||||||||||
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1N4788
Eastron Corp
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Check for Price | No | Obsolete | 10 pF | 26 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 25 V | 1 | 2.46 | 15 | ABRUPT | e0 | ISOLATED | Tin/Lead (Sn/Pb) | EASTRON CORP | unknown | EAR99 | ||||||||||||||||||||||||||
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1N4788C
Spectrum Control
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Check for Price | Active | 10 pF | 0.005 pA | 400 mW | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 25 V | 1 | 2 % | 2.1692 | 15 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | DO-7 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | API TECHNOLOGIES CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.80 | |||||||||||||
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1N4788A
Knox Semiconductor Inc
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Check for Price | No | Transferred | 10 pF | 5 nA | 500 mW | SILICON | 28 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 25 V | 1 | 10 % | 2.34 | 15 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | e0 | DO-7 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | unknown | |||||||||||
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1N4788D
Cobham PLC
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Check for Price | Obsolete | 10 pF | 5 nA | 500 mW | SILICON | 28 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 25 V | 1 | 1 % | 2.1692 | 15 | 25 V | ABRUPT | Not Qualified | O-LALF-W2 | e0 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | DO-7 | 2 | ||||||||
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1N4788
Semiconductors Inc
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Check for Price | Contact Manufacturer | 10 pF | 28 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 25 V | 1 | 0.443 | 15 | ABRUPT | ISOLATED | SEMICONDUCTORS INC | unknown | EAR99 |