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1N4454TR
Fairchild Semiconductor Corporation
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$0.0135 | Yes | Yes | Transferred | 200 mA | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | 1 | Not Qualified | O-PALF-W2 | e3 | DO-35 | 175 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | FAIRCHILD SEMICONDUCTOR CORP | DO-35 | 2 | AXIAL LEADED; GLASS; JEDEC DO204 ; VARIATION AH | compliant | EAR99 | 8541.10.00.70 | ||||||||||||
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1N4454TR
onsemi
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$0.0319 | Yes | Active | 200 mA | 650 mV | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | 2 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-35 | 175 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | ONSEMI | 017AG | compliant | EAR99 | 8541.10.00.70 | onsemi | |||||||||||
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1N4454
onsemi
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$0.0386 | Yes | Active | 200 mA | 650 mV | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | ULTRA FAST | 2 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-35 | 175 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | ONSEMI | 017AG | compliant | EAR99 | 8541.10.00.70 | onsemi | ||||||||||
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JAN1N4454-1
Microchip Technology Inc
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$0.8900 | No | Active | 200 mA | 1 V | 4 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | HIGH RELIABILITY | 1 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500/144 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||
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JANTX1N4454-1
Microsemi Corporation
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$0.9565 | No | No | Transferred | 200 mA | 1 V | 4 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | HIGH RELIABILITY | 1 A | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/144 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | |||||||||
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JANTX1N4454-1
Microchip Technology Inc
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$1.1300 | No | Active | 200 mA | 1 V | 4 ns | 100 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | HIGH RELIABILITY | 1 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500/144 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||||
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1N4454-1
Microsemi Corporation
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$1.2495 | No | No | Transferred | 200 mA | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||||||
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1N4454
Microsemi Corporation
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$1.2495 | No | No | Transferred | 200 mA | 1 V | 4 ns | 100 nA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 1 A | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | |||||||||
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JAN1N4454UR-1
Microchip Technology Inc
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$2.5703 | No | Active | 200 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-LELF-R2 | e0 | DO-213AA | 1 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||||||
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1N4454UR-1
Microchip Technology Inc
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$2.7217 | No | Active | 200 mA | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500/144 | DO-213AA | 1 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | Microchip | HERMETIC SEALED, GLASS PACKAGE-2 |