Parametric results for: 1N4153 under Rectifier Diodes
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1N4153-1
Microsemi Corporation
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$0.8570 | No | No | Transferred | 150 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||||||
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1N4153UR-1
Microsemi Corporation
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$1.2679 | No | No | Transferred | 150 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LELF-R2 | e0 | DO-213AA | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, LL34, MELF-2 | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | DO-213AA | 2 | ||||||||||
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1N4153/TR
Microchip Technology Inc
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$1.2800 | Active | 150 mA | 880 mV | 4 ns | 50 nA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | METALLURGICALLY BONDED | 2 A | 1 | Not Qualified | O-LALF-W2 | e0 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.70 | |||||||||||||
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1N4153-1
Microchip Technology Inc
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$1.2900 | No | Active | 150 mA | 880 mV | 4 ns | 50 nA | SILICON | 75 V | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 2 A | 1 | 50 V | Not Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||
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1N4153-1/TR
Microchip Technology Inc
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$1.4850 | Active | 200 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500/337 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.70 | ||||||||||||||||
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1N4153UR-1
Microchip Technology Inc
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$1.5700 | No | Active | 150 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LELF-R2 | e0 | DO-213AA | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL34, MELF-2 | compliant | ||||||||||||||||
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JANTX1N4153-1
Microsemi Corporation
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$3.1597 | No | No | Transferred | 200 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/337 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | not_compliant | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||||
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JAN1N4153-1
Microsemi Corporation
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$4.0913 | No | No | Transferred | 200 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/337 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||||
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JAN1N4153-1
Microchip Technology Inc
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$4.7714 | No | Active | 200 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500/337 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||||||
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JAN1N4153-1/TR
Microchip Technology Inc
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$4.9328 | Active | 150 mA | 880 mV | 4 ns | 50 nA | SILICON | 75 V | RECTIFIER DIODE | SINGLE | NO | 75 V | 1 | GENERAL PURPOSE | 2 A | 1 | 50 V | O-LALF-W2 | MIL-19500 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant |