Parametric results for: 1N1190 under Rectifier Diodes
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1N1190R
Solid State Devices Inc (SSDI)
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$2.5977 | Active | 35 A | 2.5 V | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | 500 A | 1 | 150 °C | SOLID STATE DEVICES INC | compliant | EAR99 | ||||||||||||||||||||||||||||
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1N1190A
GeneSic Semiconductor Inc
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$4.2331 | Yes | Active | 40 A | 1.1 V | 10 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | GENERAL PURPOSE | 800 A | 1 | O-MUPM-D1 | DO-5 | 200 °C | -65 °C | CATHODE | 1 | METAL | ROUND | POST/STUD MOUNT | SOLDER LUG | UPPER | GENESIC SEMICONDUCTOR INC | compliant | EAR99 | 8541.10.00.80 | |||||||||||||
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1N1190AR
GeneSic Semiconductor Inc
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$5.2211 | Yes | Yes | Active | 40 A | 1.1 V | 10 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | GENERAL PURPOSE | 800 A | 1 | O-MUPM-D1 | DO-5 | 200 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | SOLDER LUG | UPPER | GENESIC SEMICONDUCTOR INC | compliant | EAR99 | 8541.10.00.80 | ||||||||||
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VS-1N1190R
Vishay Intertechnologies
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$7.1088 | Yes | Active | 35 A | 1.7 V | 10 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | LOW LEAKAGE CURRENT | POWER | 500 A | 1 | O-MUPM-D1 | e3 | DO-203AB | 190 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN OVER NICKEL | SOLDER LUG | UPPER | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | DO-5, 1 PIN | Vishay | ||||||||
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VS-1N1190
Vishay Intertechnologies
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$8.0592 | Yes | Active | 35 A | 1.7 V | 10 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | LOW LEAKAGE CURRENT | POWER | 500 A | 1 | O-MUPM-D1 | e3 | DO-203AB | 200 °C | -65 °C | CATHODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN OVER NICKEL | SOLDER LUG | UPPER | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | DO-5, 1 PIN | Vishay | ||||||||
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VS-1N1190RA
Vishay Intertechnologies
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$9.4234 | Yes | Active | 40 A | 1.3 V | 2.5 mA | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | LOW LEAKAGE CURRENT | POWER | 800 A | 1 | O-MUPM-D1 | e3 | DO-203AB | 200 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN OVER NICKEL | SOLDER LUG | UPPER | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | DO-5, 1 PIN | Vishay | ||||||||
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1N1190AR
Microsemi Corporation
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$45.7223 | No | No | Transferred | 40 A | 1.19 V | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | POWER | 800 A | 1 | Not Qualified | O-MUPM-D1 | e0 | DO-203AB | 200 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN LEAD | SOLDER LUG | UPPER | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | METAL, DO-5, 1 PIN | Microsemi Corporation | DO-5 | 1 | ||||||
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1N1190
Microsemi Corporation
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$45.7223 | No | Yes | Transferred | 35 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | POWER | 500 A | 1 | Not Qualified | O-MUPM-D1 | DO-203AB | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | CATHODE | 1 | METAL | ROUND | POST/STUD MOUNT | SOLDER LUG | UPPER | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.80 | METAL, DO-5, 1 PIN | Microsemi Corporation | DO-5 | 1 | |||||||
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1N1190R
Microsemi Corporation
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$45.7223 | No | No | Transferred | 35 A | 2.5 V | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | POWER | 500 A | 1 | Not Qualified | O-MUPM-D1 | e0 | DO-203AB | 175 °C | -65 °C | ANODE | 1 | METAL | ROUND | POST/STUD MOUNT | TIN LEAD | SOLDER LUG | UPPER | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | METAL, DO-5, 1 PIN | DO-5 | 1 | |||||||
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1N1190A
Microsemi Corporation
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$45.7223 | No | Yes | Transferred | 40 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | EXCELLENT RELIABILITY | POWER | 800 A | 1 | Not Qualified | O-MUPM-D1 | DO-203AB | 200 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | CATHODE | 1 | METAL | ROUND | POST/STUD MOUNT | SOLDER LUG | UPPER | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.80 | METAL, DO-5, 1 PIN | Microsemi Corporation | DO-5 | 1 |