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SIHD14N60E-GE3
Vishay Intertechnologies
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$1.6159 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 13 A | 309 mΩ | 136 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | 2016-05-10 | Vishay | ||||||||||||
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SIHP14N60E-BE3
Vishay Intertechnologies
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$1.6640 | Yes | Active | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | Vishay | ||||||||||||||||||||||||||||||||||||||
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SIHP14N60E-GE3
Vishay Intertechnologies
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$1.6796 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 13 A | 309 mΩ | 136 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | compliant | EAR99 | 2016-05-10 | Vishay | |||||||||||||
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IXTQ14N60P
IXYS Corporation
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$1.9522 | Yes | Yes | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 14 A | 550 mΩ | AVALANCHE RATED | 900 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 42 A | SWITCHING | SILICON | R-PSFM-T3 | e3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | IXYS CORP | TO-3P, 3 PIN | compliant | EAR99 | TO-3P | 3 | ||||||||
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IXTP14N60PM
IXYS Corporation
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$2.0067 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 7 A | 550 mΩ | AVALANCHE RATED | 900 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 75 W | 42 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | IXYS CORP | TO-220, 3 PIN | compliant | EAR99 | TO-220AB | 3 | |||||||
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IXTP14N60P
IXYS Corporation
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$2.1679 | Yes | Yes | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 14 A | 550 mΩ | AVALANCHE RATED | 900 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 42 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | IXYS CORP | TO-220, 3 PIN | compliant | EAR99 | TO-220AB | 3 | |||||||
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IXFH14N60P
IXYS Corporation
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$2.1744 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 14 A | 550 mΩ | AVALANCHE RATED | 900 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 42 A | SWITCHING | SILICON | TO-247AD | R-PSFM-T3 | e3 | Not Qualified | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | IXYS CORP | TO-247, 3 PIN | compliant | EAR99 | TO-247AD | 3 | |||||
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IXTA14N60P
IXYS Corporation
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$2.2281 | Yes | Yes | Transferred | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 14 A | 550 mΩ | AVALANCHE RATED | 900 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 42 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | IXYS CORP | TO-263, 3 PIN | not_compliant | EAR99 | D2PAK | 4 | ||||
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IXFA14N60P
IXYS Corporation
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$2.3471 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 14 A | 550 mΩ | AVALANCHE RATED | 900 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 42 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | IXYS CORP | TO-263, 3 PIN | not_compliant | EAR99 | D2PAK | 4 | ||||
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IXFP14N60P
IXYS Corporation
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$2.7225 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 14 A | 550 mΩ | AVALANCHE RATED | 900 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 42 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | IXYS CORP | TO-220, 3 PIN | compliant | EAR99 | TO-220AB | 3 |