Parametric results for: 13n60c5m under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

AVALANCHE RATED 2

6 hits Apply

290.0 mJ 6

6 hits Apply

DRAIN 4 ISOLATED 2

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

600 V 6

6 hits Apply

Drain Current-Max (ID) (2)

6.5 A 2 13 A 4

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

300 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-220AB 4 TO-247AD 2

6 hits Apply

R-PSFM-T3 6

6 hits Apply

e3 4

6 hits Apply

Manufacturer (2)

IXYS Corporation 3 Littelfuse Inc 3

6 hits Apply

1 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 6

6 hits Apply

Active 3 Transferred 3

6 hits Apply

Yes 3

6 hits Apply

260 2 NOT SPECIFIED 3

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply