Parametric results for: 12n70g under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

103.0 mJ 4 790.0 mJ 3

Min (mJ) - Max (mJ)

9 hits Apply

ISOLATED 4

9 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 7

9 hits Apply

DS Breakdown Voltage-Min (1)

700 V 7

9 hits Apply

Drain Current-Max (ID) (1)

12 A 8

9 hits Apply

Drain-source On Resistance-Max (3)

700 mΩ 2 900 mΩ 4 1 Ω 1

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

9 hits Apply

4.6 pF 4

9 hits Apply

TO-220AB 6 TO-262AA 1

9 hits Apply

R-PSFM-T3 6 R-PSIP-T3 1

9 hits Apply

Manufacturer (1)

Unisonic Technologies Co Ltd 9

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

3 7

9 hits Apply

ENHANCEMENT MODE 7

9 hits Apply

150.0 °C 8

9 hits Apply

PLASTIC/EPOXY 7

9 hits Apply

RECTANGULAR 7

9 hits Apply

FLANGE MOUNT 6 IN-LINE 1

9 hits Apply

Active 6 Obsolete 3

9 hits Apply

NOT SPECIFIED 3

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

9 hits Apply

36 W 2 52 W 2 55 W 1 150 W 2 225 W 1

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

NO 8

9 hits Apply