Parametric results for: 11apr06 under EEPROMs

All Filters Additional Feature Alternate Memory Width Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

100K ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS 1

5 hits Apply

8 2

5 hits Apply

10 3

5 hits Apply

10000.0 Write/Erase Cycles 2 100000.0 Write/Erase Cycles 1

Min (Write/EraseCycles) - Max (Write/EraseCycles)

5 hits Apply

R-PDIP-T8 3

5 hits Apply

e0 3

5 hits Apply

8.9 mm 1

5 hits Apply

Manufacturer (3)

Catalyst Semiconductor 2 Mitsubishi Electric 1 Rochester Electronics LLC 2

5 hits Apply

Memory Density (1)

1.024 kbit 3

5 hits Apply

EEPROM 5

5 hits Apply

Memory Width (1)

16 3

5 hits Apply

1.0 1

5 hits Apply

8 3

5 hits Apply

64 words 3

5 hits Apply

64.0 3

5 hits Apply

SYNCHRONOUS 1

5 hits Apply

70.0 °C 2 85.0 °C 1

Min (°C) - Max (°C)

5 hits Apply

-40.0 °C 1 -10.0 °C 1 0.0 °C 1

Min (°C) - Max (°C)

5 hits Apply

Organization (1)

64X16 3

5 hits Apply

3-STATE 1

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

DIP 3

5 hits Apply

DIP8,.3 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

IN-LINE 3

5 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 3

5 hits Apply