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1 - 10 of 91 results
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SIHD11N80AE-T1-GE3
Vishay Intertechnologies
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$0.7090 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 8 A | 450 mΩ | 88 mJ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 78 W | 22 A | SWITCHING | SILICON | 104 ns | 56 ns | TO-252AA | R-PSSO-G2 | e3 | 1 | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | DPAK-3/2 | unknown | EAR99 | |||||||||||
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SIHD11N80AE-GE3
Vishay Intertechnologies
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$1.2877 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 8 A | 450 mΩ | 88 mJ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 78 W | 22 A | SWITCHING | SILICON | 104 ns | 56 ns | TO-252AA | R-PSSO-G2 | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | , | unknown | EAR99 | 2020-06-07 | |||||||||||||
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SPA11N80C3XKSA1
Infineon Technologies AG
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$1.3787 | Yes | Yes | Not Recommended | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 800 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 470 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 33 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 1 | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | TO-220AB | 3 | Infineon | ||||||||||
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SIHA11N80AE-GE3
Vishay Intertechnologies
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$1.3955 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 800 V | 1 | 8 A | 450 mΩ | 88 mJ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 31 W | 22 A | SWITCHING | SILICON | 104 ns | 56 ns | TO-220AB | R-PSFM-T3 | 150 °C | -55 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | Vishay | ||||||||||||||
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SIHP11N80AE-GE3
Vishay Intertechnologies
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$1.4377 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 800 V | 1 | 8 A | 450 mΩ | 88 mJ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 78 W | 22 A | SWITCHING | SILICON | 104 ns | 56 ns | TO-220AB | R-PSFM-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | , | unknown | EAR99 | Vishay | ||||||||||||||
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SIHB11N80AE-GE3
Vishay Intertechnologies
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$1.4621 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 800 V | 1 | 8 A | 450 mΩ | AVALANCHE RATED | 88 mJ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 78 W | 22 A | SWITCHING | SILICON | 104 ns | 56 ns | TO-263AB | R-PSSO-G2 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | 2020-06-08 | Vishay | ||||||||||||
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SPP11N80C3
Infineon Technologies AG
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$1.5374 | Yes | Yes | Not Recommended | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 800 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 470 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 156 W | 33 A | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | TO-220AB | 3 | Infineon | ||||||||||
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SPW11N80C3
Infineon Technologies AG
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$1.6848 | Yes | Yes | Not Recommended | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 800 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 470 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 156 W | 33 A | SWITCHING | SILICON | TO-247 | R-PSFM-T3 | e3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | TO-247 | 3 | Infineon | |||||||||
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SIHG11N80AE-GE3
Vishay Intertechnologies
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$1.6919 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 800 V | 1 | 8 A | 450 mΩ | 88 mJ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 78 W | 22 A | SWITCHING | SILICON | 104 ns | 56 ns | TO-247AC | R-PSFM-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | 2020-06-08 | Vishay | ||||||||||||||
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SPA11N80C3
Infineon Technologies AG
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$1.8179 | Yes | Yes | Not Recommended | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 800 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 470 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 41 W | 33 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | TO-220FP, 3 PIN | compliant | EAR99 | TO-220AB | 3 | Infineon |