Parametric results for: 10n8586 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

ISOLATED 1

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 1

4 hits Apply

Drain Current-Max (ID) (1)

85 A 1

4 hits Apply

Drain-source On Resistance-Max (1)

6.5 mΩ 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

4 hits Apply

TO-220AB 1

4 hits Apply

R-PSFM-T3 1

4 hits Apply

e3 1

4 hits Apply

Manufacturer (4)

IXYS Corporation 1 Littelfuse Inc 1 MERITEK Electronics Corporation 1 Rectron Semiconductor 1

4 hits Apply

Number of Elements (1)

1 1

4 hits Apply

Number of Terminals (1)

3 1

4 hits Apply

ENHANCEMENT MODE 1

4 hits Apply

150.0 °C 1

4 hits Apply

-50.0 °C 1

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

FLANGE MOUNT 1

4 hits Apply

Active 3 Transferred 1

4 hits Apply

Yes 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

4 hits Apply

66.1 W 1

4 hits Apply

Surface Mount (1)

NO 1

4 hits Apply