Parametric results for: 03-nl. under Small Signal Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH INPUT IMPEDANCE 31 LOGIC LEVEL COMPATIBLE 13 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD 1 LOW PROFILE 2 LOW THRESHOLD 4

183 hits Apply

126.0 mJ 1

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DRAIN 10

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Configuration (4)

SEPARATE, 2 ELEMENTS 3 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 37 SINGLE 2 SINGLE WITH BUILT-IN DIODE 80

183 hits Apply

DS Breakdown Voltage-Min (5)

20 V 15 25 V 22 30 V 80 60 V 3 100 V 1

Min (V) - Max (V)

183 hits Apply

Drain Current-Max (ID) (28)

3.5 mA 1 3.8 mA 1 260 mA 1 300 mA 8 500 mA 15 650 mA 29 680 mA 15 1.5 A 6 2.3 A 4 3 A 1 3.2 A 1 3.6 A 2 3.8 A 10 4.8 A 3 5.5 A 5 6 A 1 6.25 A 4 6.5 A 2 9 A 2 12 A 1 15 A 1 31 A 1 37 A 1 43 A 1 45 A 2 56 A 1 100 A 1 300 A 1

Min (A) - Max (A)

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Drain-source On Resistance-Max (33)

1.3 mΩ 1 3.6 mΩ 1 4.1 mΩ 1 4.3 mΩ 1 5.1 mΩ 1 6 mΩ 1 8.4 mΩ 1 8.9 mΩ 1 9.1 mΩ 1 11 mΩ 1 15 mΩ 2 20 mΩ 2 21 mΩ 3 25 mΩ 4 29 mΩ 2 32.4 mΩ 1 33 mΩ 5 35 mΩ 3 40 mΩ 1 45 mΩ 3 55 mΩ 3 70 mΩ 1 78 mΩ 2 110 mΩ 6 135 mΩ 4 450 mΩ 22 600 mΩ 29 1.4 Ω 2 1.5 Ω 2 1.9 Ω 2 2 Ω 6 2.3 Ω 2 2.5 Ω 1

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 122

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5 pF 1 9 pF 2 16 pF 1 25 pF 6 50 pF 1 52 pF 2 60 pF 31 71 pF 1 84 pF 1 88 pF 1 120 pF 1 160 pF 1

Min (pF) - Max (pF)

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MO-153AA 3 TO-236 8 TO-236AB 5 TO-92 29

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O-PBCY-T3 27 O-PBCY-W3 2 R-PDSO-F3 4 R-PDSO-G3 28 R-PDSO-G6 14 R-PDSO-G8 29 S-PDSO-F5 2 S-PDSO-F8 7 S-PDSO-G8 4 S-XDSO-N6 1 S-XUUC-N2 2

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e0 30 e1 6 e3 47

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Manufacturer (18)

Central Semiconductor Corp 7 Comchip Technology Corporation Ltd 1 Diodes Incorporated 8 Fairchild Semiconductor Corporation 28 JST Manufacturing 6 LRC Leshan Radio Co Ltd 8 Micro Commercial Components 2 Microchip Technology Inc 7 onsemi 17 Rectron Semiconductor 1 Rochester Electronics LLC 8 ROHM Semiconductor 8 Supertex Inc 24 Texas Instruments 2 Toshiba America Electronic Components 24 Unisonic Technologies Co Ltd 23 Yangzhou Yangjie Electronics Co Ltd 1 Zetex / Diodes Inc 8

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1 48 NOT SPECIFIED 3

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Number of Elements (2)

1 82 2 40

Min - Max

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Number of Terminals (5)

2 2 3 61 5 2 6 15 8 40

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ENHANCEMENT MODE 120

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150.0 °C 66

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-55.0 °C 22

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PLASTIC/EPOXY 117 UNSPECIFIED 3

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RECTANGULAR 75 ROUND 29 SQUARE 16

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CYLINDRICAL 29 SMALL OUTLINE 89 UNCASED CHIP 2

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Active 87 Contact Manufacturer 4 End Of Life 2 Not Recommended 1 Obsolete 71 Transferred 18

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No 6 Yes 38

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235 4 240 1 260 38 NOT SPECIFIED 35

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Polarity/Channel Type (2)

N-CHANNEL 83 P-CHANNEL 39

183 hits Apply

350 mW 1 740 mW 12 1 W 2

Min (W) - Max (W)

183 hits Apply

150 mW 2 200 mW 5 300 mW 5 350 mW 5 420 mW 1 600 mW 3 730 mW 4 740 mW 12 800 mW 2 830 mW 5 900 mW 2 1 W 1 33 W 1 42 W 2

Min (W) - Max (W)

183 hits Apply

Surface Mount (2)

NO 29 YES 93

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