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Memory IC Type: GDDR1 DRAM
Select parts from the table below to compare.
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K4D551638D-LC60T
 Samsung Semiconductor 		Check for Price Yes Active 268.4355 Mbit 16 16MX16 2.5 V 700 ps 166 MHz 8192 GDDR1 DRAM COMMON 2,4,8 16000000 16.7772 M 3-STATE 2,4,8 3 mA 200 µA CMOS COMMERCIAL R-PDSO-G66 Not Qualified 65 °C 66 PLASTIC/EPOXY TSSOP TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES GULL WING 635 µm DUAL SAMSUNG SEMICONDUCTOR INC TSSOP, TSSOP66,.46 compliant EAR99 8542.32.00.24
K4D551638H-LC400
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 16 16MX16 2.6 V 600 ps 250 MHz 8192 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 2,4,8 300 µA 2.7 V 2.35 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified 3 65 °C 66 PLASTIC/EPOXY TSSOP TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSSOP, TSSOP66,.46 compliant EAR99 8542.32.00.24 TSOP2 66
K4D263238K-FC400
 Samsung Semiconductor 		Check for Price Yes Obsolete 134.2177 Mbit 32 4MX32 2.5 V 600 ps 250 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 2,4,8,FP 20 mA 402 µA 2.625 V 2.375 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified e1 3 65 °C 260 144 PLASTIC/EPOXY LFBGA BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC LFBGA, BGA144,12X12,32 unknown EAR99 8542.32.00.02 BGA 144
K4D551638F-TC500
 Samsung Semiconductor 		Check for Price No Obsolete 268.4355 Mbit 16 16MX16 2.6 V 650 ps 200 MHz 8192 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 2,4,8 380 µA 2.7 V 2.5 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified 65 °C 240 30 66 PLASTIC/EPOXY TSSOP TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSSOP, TSSOP66,.46 compliant EAR99 8542.32.00.24 TSOP2 66
K4D261638K-LC40
 Samsung Semiconductor 		Check for Price Yes Obsolete 134.2177 Mbit 16 8MX16 2.5 V 600 ps 250 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 2,4,8 45 mA 350 µA 2.625 V 2.375 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified 3 65 °C 260 66 PLASTIC/EPOXY TSOP2 TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 unknown EAR99 8542.32.00.02
K4D26323QG-GC330
 Samsung Semiconductor 		Check for Price No Obsolete 134.2177 Mbit 32 4MX32 1.8 V 550 ps 300 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 2,4,8 10 mA 410 µA 1.9 V 1.7 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified 65 °C 240 30 144 PLASTIC/EPOXY LFBGA BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC LFBGA, BGA144,12X12,32 compliant EAR99 8542.32.00.02 BGA 144
K4D551638D-LC40T
 Samsung Semiconductor 		Check for Price Yes Active 268.4355 Mbit 16 16MX16 2.6 V 600 ps 250 MHz 4096 GDDR1 DRAM COMMON 2,4,8 16000000 16.7772 M 3-STATE 2,4,8 70 mA 410 µA CMOS COMMERCIAL R-PDSO-G66 Not Qualified 65 °C 66 PLASTIC/EPOXY TSSOP TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES GULL WING 635 µm DUAL SAMSUNG SEMICONDUCTOR INC TSSOP, TSSOP66,.46 compliant EAR99 8542.32.00.24
K4D551638D-LC330
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 16 16MX16 2.6 V 600 ps 300 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 2,4,8 70 mA 450 µA 2.7 V 2.5 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified 65 °C 260 66 PLASTIC/EPOXY TSOP2 TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2, TSSOP66,.46 compliant EAR99 8542.32.00.24 TSOP2 66
K4D551638D-LC2A0
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 16 16MX16 2.8 V 600 ps 350 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 2,4,8 70 mA 2.9 V 2.7 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified 65 °C 260 66 PLASTIC/EPOXY TSOP2 TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2, TSSOP66,.46 compliant EAR99 8542.32.00.24 TSOP2 66
K4D261638I-LC50T
 Samsung Semiconductor 		Check for Price Yes Obsolete 134.2177 Mbit 16 8MX16 2.5 V 700 ps 200 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 2,4,8 345 mA 390 µA 2.625 V 2.375 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified 65 °C NOT SPECIFIED NOT SPECIFIED 66 PLASTIC/EPOXY TSOP2 TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 650 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2, TSSOP66,.46 compliant EAR99 8542.32.00.02 TSOP2 66
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