Parametric results for: BSS84P under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 6 LOGIC LEVEL COMPATIBLE 4 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 9

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Configuration (3)

SINGLE 2 Single 2 SINGLE WITH BUILT-IN DIODE 19

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DS Breakdown Voltage-Min (1)

60 V 19

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Drain Current-Max (Abs) (ID) (1)

170 mA 4

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Drain Current-Max (ID) (2)

150 mA 7 170 mA 14

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

8 Ω 18 12 Ω 1

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 23

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3 pF 13 3.8 pF 5 5 pF 1

Min (pF) - Max (pF)

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R-PDSO-G3 19

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e3 12

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Manufacturer (3)

Infineon Technologies AG 21 Rochester Electronics LLC 1 Siemens 1

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1 12

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Number of Elements (1)

1 21

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Number of Terminals (1)

3 19

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ENHANCEMENT MODE 23

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150.0 °C 18

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-55.0 °C 6

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PLASTIC/EPOXY 19

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RECTANGULAR 19

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SMALL OUTLINE 19

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Active 12 Obsolete 10 Transferred 1

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Yes 4

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260 9 NOT SPECIFIED 4

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Polarity/Channel Type (1)

P-CHANNEL 23

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300 mW 5 360 mW 11

Min (W) - Max (W)

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Surface Mount (1)

YES 23

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