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51 - 60 of 52,389 results
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SI2304DDS-T1-GE3
Vishay Intertechnologies
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$0.0360 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 3.3 A | 60 mΩ | 17 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.7 W | 15 A | SWITCHING | SILICON | 55 ns | 95 ns | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -50 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | compliant | EAR99 | Vishay | ||||||||||||
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NX138BKWX
Nexperia
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$0.0361 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 210 mA | 3.5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | e3 | IEC-60134 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NEXPERIA | SC-70, 3 PIN | compliant | EAR99 | Nexperia | SC-70 | 3 | SOT323 | |||||||||||||||||
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YJL2301D
Yangzhou Yangjie Electronics Co Ltd
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$0.0363 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 19 V | 1 | 3.8 A | 47 mΩ | 103 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | 1 W | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | YANGZHOU YANGJIE ELECTRONICS CO LTD | , | compliant | EAR99 | Yangzhou Yangjie Electronic Technology Co., Ltd. | 8541.29.00.95 | 2020-09-24 | |||||||||||||||||||
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BSS306NH6327XTSA1
Infineon Technologies AG
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$0.0364 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 2.3 A | 57 mΩ | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 17 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC PACKAGE-3 | compliant | EAR99 | Infineon | 3 | |||||||||||||||||
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BSS315PH6327XTSA1
Infineon Technologies AG
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$0.0370 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 1.5 A | 150 mΩ | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 84 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC PACKAGE-3 | compliant | EAR99 | Infineon | 3 | |||||||||||||||||||
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DMN26D0UFB4-7
Diodes Incorporated
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$0.0377 | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 240 mA | 3 Ω | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PBCC-N3 | e4 | Not Qualified | AEC-Q101 | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | NICKEL PALLADIUM GOLD | NO LEAD | BOTTOM | DIODES INC | compliant | EAR99 | Diodes Incorporated | DFN | 3 | CASE DFN1006H4-3 | ||||||||||||
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SN7002WH6327XTSA1
Infineon Technologies AG
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$0.0382 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 230 mA | 5 Ω | 4.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G3 | compliant | EAR99 | Infineon | |||||||||||||||||||||
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MMFTN138
Diotec Semiconductor AG
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$0.0384 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 220 mA | 6 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIOTEC SEMICONDUCTOR AG | ROHS COMPLIANT, PLASTIC PACKAGE-3 | compliant | EAR99 | Diotec | SOT-23 | 3 | ||||||||||||||
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NTJD4105CT2G
onsemi
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$0.0386 | Yes | Active | N-CHANNEL AND P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 6 | 20 V | 2 | 630 mA | 375 mΩ | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 550 mW | SWITCHING | SILICON | R-PDSO-G6 | e3 | Not Qualified | 1 | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | SC-70, SC-88, 6 PIN | compliant | EAR99 | onsemi | SC-88/SC70-6/SOT-363 6 LEAD | 6 | 419B-02 | ||||||||||||||
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BSD235NH6327XTSA1
Infineon Technologies AG
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$0.0386 | Yes | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 20 V | 2 | 950 mA | 350 mΩ | AVALANCHE RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDSO-G6 | e3 | AEC-Q101 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G6 | compliant | EAR99 | Infineon |