Parametric results for: S-LMBT2907DW1T1G under Small Signal Bipolar Transistors

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2SC5658M3T5G
onsemi
$0.0101 Yes Active 50 V 150 mA NPN YES SINGLE 3 1 120 180 MHz 2 pF 260 mW AMPLIFIER SILICON 400 mV R-PDSO-F3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN FLAT DUAL ONSEMI SOT-723 3 LEAD 3 631AA compliant EAR99 onsemi
BCW65CLT1G
onsemi
$0.0103 Yes Active 32 V 800 mA NPN YES SINGLE 3 1 100 100 MHz 300 mW SILICON 400 ns 100 ns TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD 3 318 compliant EAR99 onsemi TO-236, 3 PIN
MMBTA63LT1G
onsemi
$0.0105 Yes Active 30 V 500 mA PNP YES DARLINGTON 3 1 10000 125 MHz 225 mW SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD 3 318 compliant EAR99 onsemi SOT-23, TO-236, 3 PIN
BC856A-7-F
Diodes Incorporated
$0.0107 Yes Yes Active 65 V 100 mA PNP YES SINGLE 3 1 125 200 MHz 300 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC 3 compliant EAR99 Diodes Incorporated
PDTC143ZT,215
Nexperia
$0.0107 Yes Active 50 V 100 mA NPN YES SINGLE WITH BUILT-IN RESISTOR 3 1 100 BUILT-IN BIAS RESISTOR RATIO IS 10 3.5 pF 250 mW SWITCHING SILICON 300 mV TO-236AB R-PDSO-G3 e3 Not Qualified AEC-Q101 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA TO-236 3 SOT23 compliant EAR99 Nexperia PLASTIC PACKAGE-3 8541.21.00.95 1997-12-12
MMUN2137LT1G
onsemi
$0.0114 Yes Active 50 V 100 mA PNP YES SINGLE WITH BUILT-IN RESISTOR 3 1 80 BUILT IN BIAS RESISTANCE RATIO IS 0.47 400 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD 3 318 compliant EAR99 onsemi 318-08, TO-236, 3 PIN
MMBT2369A
onsemi
$0.0115 Yes Obsolete 15 V 200 mA NPN YES SINGLE 3 1 20 500 MHz HIGH SPEED SATURATED SWITCHING 350 mW SWITCHING SILICON 18 ns 12 ns TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL ONSEMI SOT-23-3 318BM compliant EAR99 onsemi
MMUN2233LT1G
onsemi
$0.0117 Yes Active 50 V 100 mA NPN YES SINGLE WITH BUILT-IN RESISTOR 3 1 80 BUILT-IN BIAS RESISTOR RATIO IS 10 200 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD 3 318 compliant EAR99 onsemi HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
MMBT3906
Yangzhou Yangjie Electronics Co Ltd
$0.0117 Yes Active 40 V 200 mA PNP YES SINGLE 3 1 30 250 MHz AMPLIFIER SILICON R-PDSO-G3 1 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL YANGZHOU YANGJIE ELECTRONICS CO LTD compliant EAR99
MMBT3904
Yangzhou Yangjie Electronics Co Ltd
$0.0120 Yes Active 40 V 200 mA NPN YES SINGLE 3 1 30 300 MHz AMPLIFIER SILICON 250 ns 70 ns R-PDSO-G3 1 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL YANGZHOU YANGJIE ELECTRONICS CO LTD compliant EAR99