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IRF840
Freescale Semiconductor
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Check for Price | No | Obsolete | N-CHANNEL | NO | Single | 3 | 500 V | 1 | 8 A | 8 A | 850 mΩ | LEADFORM OPTIONS ARE AVAILABLE | 150 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 125 W | 32 A | SWITCHING | SILICON | 120 ns | 50 ns | TO-220AB | R-PSFM-T3 | e0 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | MOTOROLA SEMICONDUCTOR PRODUCTS | FLANGE MOUNT, R-PSFM-T3 | unknown | |||||||||
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IRF840LCSTRRPBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 8 A | 850 mΩ | AVALANCHE RATED | 510 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 A | SWITCHING | SILICON | S-PSSO-G2 | e3 | Not Qualified | 1 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | SMALL OUTLINE, S-PSSO-G2 | compliant | 3 | EAR99 | ||||||||||||||
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IRF840
Samsung Semiconductor
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 8 A | 850 mΩ | 510 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 125 W | 32 A | SWITCHING | SILICON | 104 ns | 56 ns | TO-220AB | R-PSFM-T3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | TO-220AB, 3 PIN | unknown | 3 | EAR99 | SFM | 8541.29.00.95 | ||||||||||||
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IRF840
Intersil Corporation
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 8 A | 850 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 125 W | 32 A | SWITCHING | SILICON | 104 ns | 56 ns | TO-220AB | R-PSFM-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | INTERSIL CORP | TO-220AB, 3 PIN | not_compliant | EAR99 | 8541.29.00.95 | ||||||||||||
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IRF840
Harris Semiconductor
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 8 A | 850 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 125 W | 32 A | SWITCHING | SILICON | 104 ns | 56 ns | TO-220AB | R-PSFM-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | HARRIS SEMICONDUCTOR | TO-220AB, 3 PIN | unknown | EAR99 | 8541.29.00.95 | ||||||||||||
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IRF840LCL
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 8 A | 850 mΩ | AVALANCHE RATED | 510 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 28 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | IN-LINE, R-PSIP-T3 | compliant | 3 | EAR99 | TO-262AA | |||||||||||
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IRF840SU
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 8 A | 850 mΩ | 640 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | IN-LINE, R-PSIP-T3 | unknown | 3 | EAR99 | |||||||||||||||||||||
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IRF840LCSTRL
International Rectifier
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Check for Price | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 8 A | 850 mΩ | AVALANCHE RATED | 510 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 A | SWITCHING | SILICON | S-PSSO-G2 | Not Qualified | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | SMALL OUTLINE, S-PSSO-G2 | unknown | 3 | EAR99 | |||||||||||||||||||
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IRF840ASTRRPBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 8 A | 850 mΩ | 510 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.1 W | 32 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | SMALL OUTLINE, R-PSSO-G2 | compliant | 3 | EAR99 | |||||||||||
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IRF840BJ69Z
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 8 A | 800 mΩ | 320 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | FLANGE MOUNT, R-PSFM-T3 | unknown | 3 | EAR99 | SFM |