Parametric results for: irhs130 under Power Field-Effect Transistors

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Select parts from the table below to compare.
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DMP3160LQ-7
Diodes Incorporated
$0.0979 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 2.7 A 122 mΩ HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.08 W 8 A SWITCHING SILICON R-PDSO-G3 e3 AEC-Q101 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 Diodes Incorporated
PJA3436-AU_R1_000A1
PanJit Semiconductor
$0.0981 Active PANJIT INTERNATIONAL INC compliant EAR99 PANJIT
PJA3407_R1_00001
PanJit Semiconductor
$0.0984 Yes Yes Not Recommended P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 3.8 A 65 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 15.2 A SWITCHING SILICON R-PDSO-G3 e3 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL PANJIT INTERNATIONAL INC compliant EAR99 GREEN, PLASTIC PACKAGE-3
SSM3J331R,LF
Toshiba America Electronic Components
$0.0984 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 4 A 75 mΩ 60 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W 10 A SWITCHING SILICON R-PDSO-F3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL TOSHIBA CORP unknown EAR99 Toshiba SOT-23F, 3 PIN
MMFTP3401-AQ
Diotec Semiconductor AG
$0.1002 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 4 A 50 mΩ 60 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.4 W 1.4 W 27 A SWITCHING SILICON TO-236 R-PDSO-G3 e3 AEC-Q101 1 150 °C -55 °C 260 10 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIOTEC SEMICONDUCTOR AG not_compliant Diotec
SSM3J334R,LF(T
Toshiba America Electronic Components
$0.1004 Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 4 A 71 mΩ 40 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W 16 A SWITCHING SILICON R-PDSO-F3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL TOSHIBA CORP unknown EAR99 Toshiba SOT-23F, 3 PIN
BSP89H6327XTSA1
Infineon Technologies AG
$0.1005 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 240 V 1 350 mA 6 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.8 W 1.4 A SILICON R-PDSO-G4 e3 AEC-Q101 1 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 Infineon SMALL OUTLINE, R-PDSO-G4 4
CSD17382F4
Texas Instruments
$0.1007 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE AND RESISTOR 3 30 V 1 -2.3 A 180 mΩ 19.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 500 mW 14.8 A SWITCHING SILICON R-XBCC-N3 e4 1 150 °C -55 °C 260 30 DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER NICKEL GOLD NO LEAD BOTTOM TEXAS INSTRUMENTS INC compliant EAR99 CHIP CARRIER, R-XBCC-N3 8541.21.00.40 2016-04-09
DMP3098L-7
Diodes Incorporated
$0.1014 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 3.8 A 70 mΩ HIGH RELIABILITY 147 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.08 W 11 A SWITCHING SILICON 54.2 ns 22 ns R-PDSO-G3 e3 Not Qualified AEC-Q101 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 Diodes Incorporated SOT-23, 3 PIN 3
IRLML2244TRPBF
Infineon Technologies AG
$0.1029 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 4.3 A 54 mΩ 110 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 W 1.3 W 18 A SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 Infineon SOT-23, 3 PIN 8541.29.00.95